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CSD22204WT Datasheet Preview

CSD22204WT Datasheet

P-Channel Power MOSFET

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CSD22204W –8 V P-Channel NexFET™ Power MOSFET
CSD22204W
SLPS559 – MARCH 2015
1 Features
1 Low Resistance
• Small Footprint 1.5 mm × 1.5 mm
• Pb Free
• Gate ESD Protection
• RoHS Compliant
• Halogen Free
• Gate-Source Voltage Clamp
2 Applications
• Battery Management
• Battery Protection
• Load Switch Applications
3 Description
This –8 V, 8.2 mΩ, 1.5 mm × 1.5 mm device is
designed to deliver the lowest on resistance and gate
charge in the smallest outline possible with excellent
thermal characteristics in an ultra low profile. Low on-
resistance coupled with the small footprint and low
profile make the device ideal for battery operated
space constrained applications.
Top View and Circuit Configuration
G
S
S
Source
S
S
S
Gate
Product Summary
TA = 25°C
VDS
Drain-to-Source Voltage
Qg
Gate Charge Total (–4.5 V)
Qgd
Gate Charge Gate-to-Drain
RDS(on) Drain-to-Source On-Resistance
VGS(th) Threshold Voltage
TYPICAL VALUE
–8
18.9
4.2
VGS = –2.5 V
VGS = –4.5 V
–0.7
11.5
8.2
UNIT
V
nC
nC
m
m
V
Device
CSD22204W
CSD22204WT
Ordering Information(1)
Qty
Media
Package
3000 7-Inch Reel
250 7-Inch Reel
1.5 mm × 1.5 mm
Wafer BGA
Package
Ship
Tape and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
.
Absolute Maximum Ratings
TA = 25°C
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
Continuous Drain Current(1)
ID
Pulsed Drain Current(2)
VALUE
–8
–6
–5
–80
UNIT
V
V
A
A
PD Power Dissipation
TJ, Operating Junction and
Tstg Storage Temperature Range
1.7
W
–55 to 150 °C
(1) Device operating at a temperature of 105ºC.
(2) Typ RθJA = 75°C/W, Pulse width 100 μs, duty cycle 1%.
DDD
Drain
RDS(on) vs VGS
32
TC = 25°C, I D = -2 A
28
TC = 125°C, I D = -2 A
24
20
16
12
8
4
0
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
-VGS - Gate-To-Source Voltage (V)
D007
1
4.5
4
ID = -2 A
VDS = -4 V
3.5
3
2.5
2
1.5
1
0.5
0
024
Gate Charge
6 8 10 12 14 16 18 20
Qg - Gate Charge (nC)
D004
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.




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CSD22204WT Datasheet Preview

CSD22204WT Datasheet

P-Channel Power MOSFET

No Preview Available !

CSD22204W
SLPS559 – MARCH 2015
www.ti.com
Table of Contents
1 Features .................................................................. 1
2 Applications ........................................................... 1
3 Description ............................................................. 1
4 Revision History..................................................... 2
5 Specifications......................................................... 3
5.1 Electrical Characteristics........................................... 3
5.2 Thermal Information .................................................. 3
5.3 Typical MOSFET Characteristics.............................. 4
6 Device and Documentation Support.................... 7
6.1 Trademarks ............................................................... 7
6.2 Electrostatic Discharge Caution ................................ 7
6.3 Glossary .................................................................... 7
7 Mechanical, Packaging, and Orderable
Information ............................................................. 8
7.1 CSD22204W Package Dimensions .......................... 8
7.2 Recommended Land Pattern .................................... 9
7.3 Tape and Reel Information ....................................... 9
4 Revision History
DATE
March 2015
REVISION
*
NOTES
Initial release.
2
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Product Folder Links: CSD22204W
Copyright © 2015, Texas Instruments Incorporated


Part Number CSD22204WT
Description P-Channel Power MOSFET
Maker etcTI
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