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CSD22204W - P-Channel Power MOSFET

General Description

This

8 V, 8.2 mΩ, 1.5 mm × 1.5 mm device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile.

Key Features

  • 1 Low Resistance.
  • Small Footprint 1.5 mm × 1.5 mm.
  • Pb Free.
  • Gate ESD Protection.
  • RoHS Compliant.
  • Halogen Free.
  • Gate-Source Voltage Clamp 2.

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Other Datasheets by Texas Instruments

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CSD22204WT P-Channel Power MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD22204W –8 V P-Channel NexFET™ Power MOSFET CSD22204W SLPS559 – MARCH 2015 1 Features •1 Low Resistance • Small Footprint 1.5 mm × 1.5 mm • Pb Free • Gate ESD Protection • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Battery Management • Battery Protection • Load Switch Applications 3 Description This –8 V, 8.2 mΩ, 1.5 mm × 1.5 mm device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile. Low onresistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.