Datasheet4U Logo Datasheet4U.com

CSD23381F4 - P-Channel Power MOSFET

General Description

This 150 mΩ, 12 V P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications.

This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

Key Features

  • Ultra-Low On-Resistance.
  • Ultra-Low Qg and Qgd.
  • High Operating Drain Current.
  • Ultra-Small Footprint (0402 Case Size).
  • 1.0 mm × 0.6 mm.
  • Ultra-Low Profile.
  • 0.35 mm Max Height.
  • Integrated ESD Protection Diode.
  • Rated >4 kV HBM.
  • Rated >2 kV CDM.
  • Lead and Halogen Free.
  • RoHS Compliant 2.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CSD23381F4 SLPS450E – OCTOBER 2013 – REVISED MAY 2015 CSD23381F4 12 V P-Channel FemtoFET™ MOSFET 1 Features • Ultra-Low On-Resistance • Ultra-Low Qg and Qgd • High Operating Drain Current • Ultra-Small Footprint (0402 Case Size) – 1.0 mm × 0.6 mm • Ultra-Low Profile – 0.35 mm Max Height • Integrated ESD Protection Diode – Rated >4 kV HBM – Rated >2 kV CDM • Lead and Halogen Free • RoHS Compliant 2 Applications • Optimized for Load Switch Applications • Optimized for General Purpose Switching Applications • Battery Applications • Handheld and Mobile Applications 3 Description This 150 mΩ, 12 V P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications.