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CSD23381F4 Datasheet Preview

CSD23381F4 Datasheet

P-Channel Power MOSFET

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CSD23381F4
SLPS450E – OCTOBER 2013 – REVISED MAY 2015
CSD23381F4 12 V P-Channel FemtoFETMOSFET
1 Features
• Ultra-Low On-Resistance
• Ultra-Low Qg and Qgd
• High Operating Drain Current
• Ultra-Small Footprint (0402 Case Size)
– 1.0 mm × 0.6 mm
• Ultra-Low Profile
– 0.35 mm Max Height
• Integrated ESD Protection Diode
– Rated >4 kV HBM
– Rated >2 kV CDM
• Lead and Halogen Free
• RoHS Compliant
2 Applications
• Optimized for Load Switch Applications
• Optimized for General Purpose Switching
Applications
• Battery Applications
• Handheld and Mobile Applications
3 Description
This 150 mΩ, 12 V P-Channel FemtoFETMOSFET
is designed and optimized to minimize the footprint
in many handheld and mobile applications. This
technology is capable of replacing standard small
signal MOSFETs while providing at least a 60%
reduction in footprint size.
Product Summary
TA = 25°C
TYPICAL VALUE
VDS
Drain-to-Source Voltage
–12
Qg
Gate Charge Total (–4.5 V)
1140
UNIT
V
pC
Product Summary (continued)
TA = 25°C
TYPICAL VALUE
Qgd
Gate Charge Gate-to-Drain
190
RDS(on)
Drain-to-Source On-
Resistance
VGS = –1.8 V
480
VGS = –2.5 V
250
VGS = –4.5 V
150
VGS(th) Threshold Voltage
–0.95
UNIT
pC
mΩ
mΩ
mΩ
V
Device(1)
CSD23381F4
CSD23381F4T
Ordering Information
Qty Media
Package
3000
250
7-Inch
Reel
Femto(0402)
1.0 mm x 0.6 mm
Land Grid Array (LGA)
Ship
Tape and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
.
Absolute Maximum Ratings
TA = 25°C
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
ID
Continuous Drain Current(1)
IDM
Pulsed Drain Current(2)
Continuous Gate Clamp Current
IG
Pulsed Gate Clamp Current(2)
VALUE
–12
–8
–2.3
–9
–35
–350
PD
Power Dissipation(1)
500
Human Body Model (HBM)
4
V(ESD) Charged Device Model (CDM)
2
TJ,
Operating Junction and
Tstg Storage Temperature Range
–55 to 150
UNIT
V
V
A
A
mA
mW
kV
kV
°C
(1) Typical RθJA = 85°C/W on 1 inch2 (6.45 cm2), 2 oz.
(0.071 mm thick) Cu pad on a 0.06 inch (1.52 mm) thick FR4
PCB.
(2) Pulse duration ≤300 μs, duty cycle ≤2%
0.35 mm
D
0.60 mm
1.00 mm
Typical Part Dimensions
G
S
Top View
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.




etcTI

CSD23381F4 Datasheet Preview

CSD23381F4 Datasheet

P-Channel Power MOSFET

No Preview Available !

CSD23381F4
SLPS450E – OCTOBER 2013 – REVISED MAY 2015
www.ti.com
Table of Contents
1 Features............................................................................1
2 Applications..................................................................... 1
3 Description.......................................................................1
4 Revision History.............................................................. 2
5 Specifications.................................................................. 3
5.1 Electrical Characteristics.............................................3
5.2 Thermal Information....................................................3
5.3 Typical MOSFET Characteristics................................ 4
6 Device and Documentation Support..............................6
6.1 Trademarks................................................................. 6
6.2 Electrostatic Discharge Caution..................................6
6.3 Glossary......................................................................6
7 Mechanical, Packaging, and Orderable Information.... 7
7.1 Mechanical Dimensions.............................................. 7
7.2 Recommended Minimum PCB Layout........................8
7.3 Recommended Stencil Pattern................................... 8
7.4 CSD23381F4 Embossed Carrier Tape Dimensions....9
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision D (September 2014) to Revision E (April 2015)
Page
• Corrected typo for IDSS Test Condition ...............................................................................................................3
• Corrected typo for IGSS Test Condition ...............................................................................................................3
Changes from Revision C (July 2014) to Revision D (September 2014)
Page
• Corrected timing VDS to read –6 V .....................................................................................................................3
Changes from Revision B (February 2014) to Revision C (July 2014)
Page
• Corrected capacitance units to read pF in Section 5.3 ...................................................................................... 4
Changes from Revision A (January 2014) to Revision B (January 2014)
Page
• Updated lead and halogen free in features ........................................................................................................1
• Added IG parameter............................................................................................................................................ 1
• Lowered IDSS limit............................................................................................................................................... 3
• Lowered IGSS limit............................................................................................................................................... 3
• Deleted the CSD68830F4 Embossed Carrier Tape Dimensions section............................................................8
Changes from Revision * (October 2013) to Revision A (January 2014)
Page
• Added small reel info.......................................................................................................................................... 1
2
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Copyright © 2021 Texas Instruments Incorporated


Part Number CSD23381F4
Description P-Channel Power MOSFET
Maker etcTI
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