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CSD23381F4 - P-Channel Power MOSFET

Datasheet Summary

Description

This 150 mΩ, 12 V P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications.

This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

Features

  • Ultra-Low On-Resistance.
  • Ultra-Low Qg and Qgd.
  • High Operating Drain Current.
  • Ultra-Small Footprint (0402 Case Size).
  • 1.0 mm × 0.6 mm.
  • Ultra-Low Profile.
  • 0.35 mm Max Height.
  • Integrated ESD Protection Diode.
  • Rated >4 kV HBM.
  • Rated >2 kV CDM.
  • Lead and Halogen Free.
  • RoHS Compliant 2.

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Datasheet preview – CSD23381F4

Datasheet Details

Part number CSD23381F4
Manufacturer Texas Instruments
File Size 1.84 MB
Description P-Channel Power MOSFET
Datasheet download datasheet CSD23381F4 Datasheet
Additional preview pages of the CSD23381F4 datasheet.

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Full PDF Text Transcription

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CSD23381F4 SLPS450E – OCTOBER 2013 – REVISED MAY 2015 CSD23381F4 12 V P-Channel FemtoFET™ MOSFET 1 Features • Ultra-Low On-Resistance • Ultra-Low Qg and Qgd • High Operating Drain Current • Ultra-Small Footprint (0402 Case Size) – 1.0 mm × 0.6 mm • Ultra-Low Profile – 0.35 mm Max Height • Integrated ESD Protection Diode – Rated >4 kV HBM – Rated >2 kV CDM • Lead and Halogen Free • RoHS Compliant 2 Applications • Optimized for Load Switch Applications • Optimized for General Purpose Switching Applications • Battery Applications • Handheld and Mobile Applications 3 Description This 150 mΩ, 12 V P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications.
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