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CSD25202W15 Datasheet Preview

CSD25202W15 Datasheet

P-Channel Power MOSFET

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CSD25202W15
SLPS508A – JUNE 2014 – REVISED JULY 2014
CSD25202W15 20-V P-Channel NexFET™ Power MOSFET
1 Features
1 Low-Resistance
• Small Footprint 1.5 mm × 1.5 mm
• Gate ESD Protection –3 kV
• Pb Free
• RoHS Compliant
• Halogen Free
• Gate-Source Voltage Clamp
2 Applications
• Battery Management
• Battery Protection
3 Description
This 21 mΩ, 20 V device is designed to deliver the
lowest on resistance and gate charge in a small 1.5
mm × 1.5 mm chip scale package with excellent
thermal characteristics in an ultra-low profile. Low on
resistance coupled with the small footprint and low
profile make the device ideal for battery operated
space constrained applications.
Top View
Pin A1 Indicator
G
D
S
Symbol
Source
Gate
D
D
S
D
S
S
Drain
P0117-01
Product Summary
TA = 25°C
VDS Drain-to-Source Voltage
Qg
Gate Charge Total (–4.5 V)
Qgd
Gate Charge Gate-to-Drain
RDS(on) Drain-to-Source On Resistance
VGS(th) Threshold Voltage
TYPICAL VALUE
–20
5.8
0.8
VGS = –1.8 V
40
VGS = –2.5 V
26
VGS = –4.5 V
21
–0.75
UNIT
V
nC
nC
m
m
m
V
Device
CSD25202W15
CSD25202W15T
Ordering Information(1)
Qty
Media
Package
3000 7-Inch Reel
250 7-Inch Reel
1.5-mm × 1.5-mm
Wafer Level
Package
Ship
Tape and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Text Added For Spacing
Absolute Maximum Ratings
TA = 25°C
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
Continuous Drain Current(1)
ID
Pulsed Drain Current(2)
Continuous Gate Current(1)
IG
Pulsed Gate Current(2)
VALUE
–20
–6
–4
–38
–0.5
–7
UNIT
V
V
A
A
A
A
PD Power Dissipation
TJ, Operating Junction and
Tstg Storage Temperature Range
0.5
W
–55 to 150 °C
(1) Ball limited
(2) Typical RθJA = 220ºC/W, pulse duration 100 µs, duty cycle
1%
50
46
42
38
34
30
26
22
18
14
10
0
RDS(on) vs VGS
TC = 25°C,I D = −2A
TC = 125°C,I D = −2A
1
2
3
4
5
6
VGS - Gate-to- Source Voltage (V)
G001
Gate Charge
4.5
ID = −2A
4 VDS = −10V
3.5
3
2.5
2
1.5
1
0.5
0
0
1
2
3
4
5
6
Qg - Gate Charge (nC)
G001
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.




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CSD25202W15 Datasheet Preview

CSD25202W15 Datasheet

P-Channel Power MOSFET

No Preview Available !

CSD25202W15
SLPS508A – JUNE 2014 – REVISED JULY 2014
www.ti.com
Table of Contents
1 Features .................................................................. 1
2 Applications ........................................................... 1
3 Description ............................................................. 1
4 Revision History..................................................... 2
5 Specifications......................................................... 3
5.1 Electrical Characteristics........................................... 3
5.2 Thermal Information .................................................. 3
5.3 Typical MOSFET Characteristics.............................. 4
6 Device and Documentation Support.................... 7
6.1 Trademarks ............................................................... 7
6.2 Electrostatic Discharge Caution ................................ 7
6.3 Glossary .................................................................... 7
7 Mechanical, Packaging, and Orderable
Information ............................................................. 8
7.1 CSD25202W15 Package Dimensions ...................... 8
7.2 Recommended Land Pattern .................................... 9
7.3 Tape and Reel Information ....................................... 9
4 Revision History
Changes from Original (June 2014) to Revision A
Page
• Corrected "Drain-to-Drain Voltage" to state "Drain-to-Source Voltage" ................................................................................. 1
2
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Product Folder Links: CSD25202W15
Copyright © 2014, Texas Instruments Incorporated


Part Number CSD25202W15
Description P-Channel Power MOSFET
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