CSD25211W1015 Overview
Description
The device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent Top View Product Summary TA = 25°C unless otherwise stated VDS Drain-to-Source Voltage Qg Gate Charge Total (–4.5V) Qgd Gate Charge Gate to Drain RDS(on) Drain-to-Source On Resistance VGS(th) Voltage Threshold TYPICAL VALUE –20 3.4 0.2 VGS = –2.5 V 36 VGS = –4.5 V 27 –0.8 UNIT V nC nC mΩ mΩ V Device CSD25211W1015.
Key Features
- 1 Ultra-Low On Resistance
- Ultra-Low Qg and Qgd
- Small Footprint 1.0 mm × 1.5 mm
- Low Profile 0.62 mm Height
- Gate-Source Voltage Clamp
- Gate ESD Protection – 3 kV
- RoHS Compliant
- Halogen Free
