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CSD25211W1015 Datasheet P-Channel Power MOSFET

Manufacturer: Texas Instruments

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General Description

The device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile.

Top View Product Summary TA = 25°C unless otherwise stated VDS Drain-to-Source Voltage Qg Gate Charge Total (–4.5V) Qgd Gate Charge Gate to Drain RDS(on) Drain-to-Source On Resistance VGS(th) Voltage Threshold TYPICAL VALUE –20 3.4 0.2 VGS = –2.5 V 36 VGS = –4.5 V 27 –0.8 UNIT V nC nC mΩ mΩ V Device CSD25211W1015 Ordering Information Package Media Qty 1 × 1.5 Wafer Level Package 7-inch reel 3000 Ship Tape and Reel Absolute Maximum Ratings TA = 25°C unless otherwise stated VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage ID Continuous Drain Current, TA = 25°C(1) IDM Pulsed Drain Current, TA = 25°C(2) IG Continuous Drain Current, TA = 25°C Pulsed Drain Current PD Power Dissipation(1) TSTG Storage Temperature Range TJ Operating Junction Temperature Range VALUE -20 -6 -3.2 -9.5 -0.5 -7 1 UNIT V V A A A A W –55 to 150 °C (1) Typical RθJA = 119°C/W on 1 inch2 of 2 oz.

Cu on 0.06-inch thick FR4 PCB.

Overview

CSD25211W1015 SLPS296A – FEBRUARY 2012 – REVISED JANUARY 2014 CSD25211W1015, P-Channel NexFET™ Power MOSFET.

Key Features

  • 1 Ultra-Low On Resistance.
  • Ultra-Low Qg and Qgd.
  • Small Footprint 1.0 mm × 1.5 mm.
  • Low Profile 0.62 mm Height.
  • Pb Free.
  • Gate-Source Voltage Clamp.
  • Gate ESD Protection.
  • 3 kV.
  • RoHS Compliant.
  • Halogen Free 2.

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