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CSD25303W1015 - P-Channel Power MOSFET

General Description

The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile.

Key Features

  • 1.
  • Ultra Low Qg and Qgd.
  • Small Footprint.
  • Low Profile 0.62mm Height.
  • Pb Free.
  • RoHS Compliant.
  • Halogen Free.
  • CSP 1 × 1.5 mm Wafer Level Package.

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Other Datasheets by Texas Instruments

Part Number Description
CSD25301W1015 P-Channel Power MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CSD25303W1015 www.ti.com P-Channel NexFET™ Power MOSFET Check for Samples: CSD25303W1015 SLPS292 – JANUARY 2011 FEATURES 1 • Ultra Low Qg and Qgd • Small Footprint • Low Profile 0.62mm Height • Pb Free • RoHS Compliant • Halogen Free • CSP 1 × 1.5 mm Wafer Level Package APPLICATIONS • Battery Management • Load Switch • Battery Protection DESCRIPTION The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile. Top View D D S S S G PRODUCT SUMMARY TA = 25°C unless otherwise stated VDS Drain to Source Voltage Qg Gate Charge Total (4.5V) Qgd Gate Charge Gate to Drain RDS(on) Drain to Source On Resistance VGS(th) Voltage Threshold TYPICAL VALUE –20 3.3 0.