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CSD25303W1015 Datasheet Preview

CSD25303W1015 Datasheet

P-Channel Power MOSFET

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CSD25303W1015
www.ti.com
P-Channel NexFET™ Power MOSFET
Check for Samples: CSD25303W1015
SLPS292 – JANUARY 2011
FEATURES
1
• Ultra Low Qg and Qgd
• Small Footprint
• Low Profile 0.62mm Height
• Pb Free
• RoHS Compliant
• Halogen Free
• CSP 1 × 1.5 mm Wafer Level Package
APPLICATIONS
• Battery Management
• Load Switch
• Battery Protection
DESCRIPTION
The device has been designed to deliver the lowest
on resistance and gate charge in the smallest outline
possible with excellent thermal characteristics in an
ultra low profile.
Top View
D
D
S
S
S
G
PRODUCT SUMMARY
TA = 25°C unless otherwise stated
VDS
Drain to Source Voltage
Qg
Gate Charge Total (4.5V)
Qgd
Gate Charge Gate to Drain
RDS(on) Drain to Source On Resistance
VGS(th) Voltage Threshold
TYPICAL VALUE
–20
3.3
0.6
VGS = –1.8V
72
VGS = –2.5V
56
VGS = –4.5V
46
–0.65
UNIT
V
nC
nC
m
m
m
V
ORDERING INFORMATION
Device
Package
Media
Qty
CSD25303W1015
1 × 1.5 Wafer
Level Package
7-inch reel 3000
Ship
Tape and
Reel
ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise stated
VDS Drain to Source Voltage
VGS Gate to Source Voltage
ID
Continuous Drain Current, TC = 25°C(1)
IDM Pulsed Drain Current, TA = 25°C(2)
PD
Power Dissipation(1)
TSTG Storage Temperature Range
TJ, Operating Junction Temperature Range
VALUE
–20
±8
–3
–9
1.5
UNIT
V
V
A
A
W
–55 to 150 °C
(1) Typical RqJA = 90°C/W on 1in2 Cu (2 oz.) on 0.060" thick FR4
PCB.
(2) Pulse width 1ms, duty cycle 2%
P0099-01
200
180
160
140
120
100
80
60
40
20
0
0
RDS(ON) vs VGS
ID = −1.5A
TC = 25°C
TC = 125ºC
1
2
3
4
5
6
VGS - Gate-to- Source Voltage - V
5
ID = −1.5A
VDD = −10V
4
Gate Charge
3
2
1
0
0
1
2
3
4
Qg - Gate Charge - nC (nC)
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2011, Texas Instruments Incorporated




etcTI

CSD25303W1015 Datasheet Preview

CSD25303W1015 Datasheet

P-Channel Power MOSFET

No Preview Available !

CSD25303W1015
SLPS292 – JANUARY 2011
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
PARAMETER
Static Characteristics
BVDSS
IDSS
IGSS
VGS(th)
Drain to Source Voltage
Drain to Source Leakage Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
RDS(on) Drain to Source On Resistance
gfs
Transconductance
Dynamic Characteristics
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
Rg
Qg
Gate Charge Total (–4.5V)
Qgd
Gate Charge Gate to Drain
Qgs
Gate Charge Gate to Source
Qg(th)
Gate Charge at Vth
QOSS
Output Charge
td(on)
Turn On Delay Time
tr
Rise Time
td(off)
Turn Off Delay Time
tf
Fall Time
Diode Characteristics
VSD
Diode Forward Voltage
Qrr
Reverse Recovery Charge
trr
Reverse Recovery Time
TEST CONDITIONS
VGS = 0V, ID = –250mA
VGS = 0V, VDS = –16V
VDS = 0V, VGS = ±8V
VDS = VGS, ID = –250mA
VGS = –1.8V, ID = –1.5A
VGS = –2.5V, ID = –1.5A
VGS = –4.5V, ID = –1.5A
VDS = –10V, ID = –1.5A
VGS = 0V, VDS = –10V, f = 1MHz
VDS = –10V, ID = –1.5A
VDS = –11V, VGS = 0V
VDS = –10V, VGS = –4.5V, ID = –1.5A
RG = 4
IS = –1.5A, VGS = 0V
Vdd= –11V, IF = –1.5A, di/dt = 200A/ms
THERMAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
PARAMETER
R qJA
Thermal Resistance Junction to Ambient (Minimum Cu area)
Thermal Resistance Junction to Ambient (1 in2 Cu area)
MIN TYP MAX UNIT
–20
V
–1 mA
–100 nA
–0.4 –0.65
–1 V
72
92 m
56
71 m
46
58 m
9.6
S
335 435 pF
149 191 pF
50
65 pF
0.6 1.2
3.3 4.3 nC
0.6
nC
0.6
nC
0.3
nC
2.5
nC
3.9
ns
8.6
ns
11.3
ns
7.8
ns
–0.72
3.6
11.3
–1 V
nC
ns
MIN TYP MAX UNIT
198 °C/W
112 °C/W
2
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Product Folder Link(s): CSD25303W1015
Copyright © 2011, Texas Instruments Incorporated


Part Number CSD25303W1015
Description P-Channel Power MOSFET
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