• Part: CSD25303W1015
  • Description: P-Channel Power MOSFET
  • Category: MOSFET
  • Manufacturer: Texas Instruments
  • Size: 178.70 KB
CSD25303W1015 Datasheet (PDF) Download
Texas Instruments
CSD25303W1015

Description

The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent Top View D D S S S G PRODUCT SUMMARY TA = 25°C unless otherwise stated VDS Drain to Source Voltage Qg Gate Charge Total (4.5V) Qgd Gate Charge Gate to Drain RDS(on) Drain to Source On Resistance VGS(th) Voltage Threshold TYPICAL VALUE –20 3.3 0.6 VGS = –1.8V 72 VGS = –2.5V 56 VGS = –4.5V 46 –0.65 UNIT V nC nC mΩ mΩ mΩ V.

Key Features

  • Ultra Low Qg and Qgd
  • Small Footprint
  • Low Profile 0.62mm Height
  • Halogen Free
  • CSP 1 × 1.5 mm Wafer Level Package

Applications

  • Battery Management