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CSD25401Q3 Datasheet Preview

CSD25401Q3 Datasheet

P-Channel Power MOSFET

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Not Recommended for New Designs
CSD25401Q3
www.ti.com
SLPS211C – AUGUST 2009 – REVISED APRIL 2013
P-Channel NexFET™ Power MOSFETs
Check for Samples: CSD25401Q3
FEATURES
1
2 Ultra Low Qg and Qgd
• Low Thermal Resistance
• Low RDS(on)
• Pb Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 3.3mm x 3.3mm Plastic Package
APPLICATIONS
• DC-DC Converters
• Battery Management
• Load Switch
• Battery Protection
DESCRIPTION
The NexFET™ power MOSFET has been designed
to minimize losses in power conversion load
management applications. The SON 3×3 package
offers excellent thermal performance for the size of
the package.
Figure 1. Top View
D1
8S
Table 1. PRODUCT SUMMARY
VDS
Drain to Source Voltage
Qg
Gate Charge Total (4.5V)
Qgd
Gate Charge Gate to Drain
RDS(on) Drain to Source On Resistance
Vth
Threshold Voltage
–20
V
8.8
nC
2.1
nC
VGS = –2.5V 13.5 m
VGS = –4.5V
8.8 m
–0.85
V
ORDERING INFORMATION
Device
Package
Media
Qty
CSD25401Q3
SON 3 × 3 Plastic 13-inch
Package
reel
2500
Ship
Tape and
Reel
ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise stated
VDS Drain to Source Voltage
VGS Gate to Source Voltage
ID
Continuous Drain Current, TC = 25°C
Continuous Drain Current(1)
IDM Pulsed Drain Current, TA = 25°C(2)
PD
Power Dissipation(1)
TJ, Operating Junction and Storage
TSTG Temperature Range
VALUE
–20
+12 / -12
–60
–14
–82
2.8
UNIT
V
V
A
A
A
W
–55 to 150 °C
(1) RθJA = 45°C/W on 1inch2 Cu (2 oz.) on 0.060" thick FR4 PCB.
(2) Pulse width 300µs , duty cycle 2%
D2
7S
D3
4
G
6S
S
5
S
RDS(ON) vs VGS
30
ID = −10A
25
20
TC = 125°C
15
10
5
TC = 25°C
0
0 1 2 3 4 5 6 7 8 9 10
−VGS − Gate to Source Voltage − V
G006
Gate Charge
10
9 ID = −10A
8 VDS = −10V
7
6
5
4
3
2
1
0
0
2
4
6
8 10 12 14 16
Qg − Gate Charge − nC
G003
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NexFET is a trademark of Texas Instruments.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2009–2013, Texas Instruments Incorporated




etcTI

CSD25401Q3 Datasheet Preview

CSD25401Q3 Datasheet

P-Channel Power MOSFET

No Preview Available !

CSD25401Q3
Not Recommended for New Designs
SLPS211C – AUGUST 2009 – REVISED APRIL 2013
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
PARAMETER
Static Characteristics
BVDSS
IDSS
IGSS
VGS(th)
Drain to Source Voltage
Drain to Source Leakage Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
RDS(on) Drain to Source On Resistance
gfs
Transconductance
Dynamic Characteristics
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
Qg
Gate Charge Total (4.5V)
Qgd
Gate Charge Gate to Drain
Qgs
Gate Charge Gate to Source
Qg(th)
Gate Charge at Vth
QOSS
Output Charge
td(on)
Turn On Delay Time
tr
Rise Time
td(off)
Turn Off Delay Time
tf
Fall Time
Diode Characteristics
VSD
Diode Forward Voltage
Qrr
Reverse Recovery Charge
trr
Reverse Recovery Time
TEST CONDITIONS
VGS = 0V, ID = –250μA
VGS = 0V, VDS = –20V to –16V
VDS = 0V, VGS = ±12V
VDS = VGS, ID = –250μA
VGS = –2.5V, ID = –10A
VGS = –4.5V, ID = –10A
VDS = –15V, ID = –10A
VGS = 0V, VDS = –10V,
f = 1MHz
VDS = –10V, ID = –10A
VDS = –10V, VGS = 0V
VDS = –10V, VGS = –4.5V,
ID = –10A , RG = 5.1
IS = –10A, VGS = 0V
VDD = –12.5V, IF = –10A,
di/dt = 300A/μs
www.ti.com
MIN TYP MAX UNIT
–20
V
–1 μA
–100 nA
–0.6 –0.85 –1.2 V
13.5 18.2 m
8.8 11.7 m
43
S
1070 1400 pF
560 730 pF
180 230 pF
8.8 12.3 nC
2.1
nC
2.1
nC
0.9
nC
8.2
nC
8.1
ns
3.9
ns
13.5
ns
12.6
ns
–0.7
–1
V
17.4
nC
21
ns
THERMAL INFORMATION
THERMAL METRIC(1)(2)
θJA
θJCtop
θJB
ψJT
ψJB
θJCbot
Junction-to-ambient thermal resistance
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
Junction-to-top characterization parameter
Junction-to-board characterization parameter
Junction-to-case (bottom) thermal resistance
CSD25401Q3
8 PIN
42.0
20.6
8.8
0.3
8.7
0.1
UNITS
°C/W
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
(2) For thermal estimates of this device based on PCB copper area, see the TI PCB Thermal Calculator.
2
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Copyright © 2009–2013, Texas Instruments Incorporated
Product Folder Links: CSD25401Q3


Part Number CSD25401Q3
Description P-Channel Power MOSFET
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