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DS26LV31QML Datasheet Preview

DS26LV31QML Datasheet

3V Enhanced CMOS Quad Differential Line Driver

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DS26LV31QML
www.ti.com
SNOSAS6A – MARCH 2006 – REVISED APRIL 2013
DS26LV31QML 3V Enhanced CMOS Quad Differential Line Driver
Check for Samples: DS26LV31QML
FEATURES
1
2 Comparable to Both TIA/EIA-422 and ITU-T
V.11 Standards.
• Interoperable with Existing 5V RS-422
Networks
• Low Quiescent Current
• Pin Compatible with DS26C31
DESCRIPTION
The DS26lV31 is a high-speed quad differential
CMOS driver that is comparable to the TIA/EIA-422-B
and ITU-T V.11 standards. The CMOS DS26LV31
features low static ICC of 125 µA Max which makes it
ideal for battery powered and power conscious
applications. Differential outputs have the same VOD
specification (2V) as the 5V version. The EN and EN
inputs allow active Low or active High control of the
TRI-STATE outputs. The enables are common to all
four drivers. Protection diodes protect all the driver
inputs against electrostatic discharge. The driver and
enable inputs (DI, EN, EN) are compatible with low
voltage LVTTL and LVCMOS devices.
Connection Diagram
Figure 1. CLGA Package- Top View
See Package Number NAD0016A
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2006–2013, Texas Instruments Incorporated




etcTI

DS26LV31QML Datasheet Preview

DS26LV31QML Datasheet

3V Enhanced CMOS Quad Differential Line Driver

No Preview Available !

DS26LV31QML
SNOSAS6A – MARCH 2006 – REVISED APRIL 2013
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings (1)(2)
Supply Voltage (VCC)
DC Input Voltage (VI)
DC Output Voltage (VO) Power off
Clamp Diode Current (IIK, IOK)
DC Output Current, per Pin (IO)
Storage Temperature Range (TStg)
Lead Temperature (TL) Soldering, 4 seconds
Maximum Power Dissipation +25°C (3)
-0.5V to 7.0V
-0.5V to VCC+0.5V
-0.5V to 7V
±20mA
±150mA
-65°C TA +150°C
260°C
1119mW
Thermal Resistance
θJA
134°C/W
θJC
12.5°C/W
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is functional, but do not verify specific performance limits. For verified specifications and test conditions, see the
Electrical Characteristics. The verified specifications apply only for the test conditions listed. Some performance characteristics may
degrade when the device is not operated under the listed test conditions.
(2) Unless otherwise specified, all voltages are referenced to ground. All currents into device pins are positive, all currents out of device
pins are negative.
(3) Derate W package 7.5mW/°C above +25°C.
Recommended Operating Conditions
Supply Voltage (vCC)
DC input or Output Voltage (VI, VO)
Operating Temperature Range (TA)
3.0V to 3.6V
0V to VCC
55°C TA +125°C
Table 1. Quality Conformance Inspection Mil-Std-883, Method 5005 - Group A
Subgroup
1
2
3
4
5
6
7
8A
8B
9
10
11
12
13
14
Description
Static tests at
Static tests at
Static tests at
Dynamic tests at
Dynamic tests at
Dynamic tests at
Functional tests at
Functional tests at
Functional tests at
Switching tests at
Switching tests at
Switching tests at
Settling time at
Settling time at
Settling time at
Temp °C
25
125
-55
25
125
-55
25
125
-55
25
125
-55
25
125
-55
2
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Copyright © 2006–2013, Texas Instruments Incorporated
Product Folder Links: DS26LV31QML


Part Number DS26LV31QML
Description 3V Enhanced CMOS Quad Differential Line Driver
Maker etcTI
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