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ISO5851 Datasheet Preview

ISO5851 Datasheet

High-CMTI 2.5-A and 5-A Isolated IGBT MOSFET Gate Driver

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ISO5851
SLLSEN5B – JUNE 2015 – REVISED JANUARY 2017
ISO5851 High-CMTI 2.5-A and 5-A Isolated IGBT, MOSFET Gate Driver
With Active Protection Features
1 Features
1 100-kV/μs Minimum Common-Mode Transient
Immunity (CMTI) at VCM = 1500 V
• 2.5-A Peak Source and 5-A Peak Sink Currents
• Short Propagation Delay: 76 ns (Typ),
110 ns (Max)
• 2-A Active Miller Clamp
• Output Short-Circuit Clamp
• Fault Alarm upon Desaturation Detection is
Signaled on FLT and Reset Through RST
• Input and Output Undervoltage Lockout (UVLO)
with Ready (RDY) Pin Indication
• Active Output Pull-down and Default Low Outputs
with Low Supply or Floating Inputs
• 3-V to 5.5-V Input Supply Voltage
• 15-V to 30-V Output Driver Supply Voltage
• CMOS Compatible Inputs
• Rejects Input Pulses and Noise Transients
Shorter Than 20 ns
• Operating Temperature: –40°C to +125°C
Ambient
• Isolation Surge Withstand Voltage 12800-VPK
• Safety-Related Certifications:
– 8000-VPK VIOTM and 2121-VPK VIORM
Reinforced Isolation per DIN V VDE V 0884-10
(VDE V 0884-10):2006-12
– 5700-VRMS Isolation for 1 Minute per UL 1577
– CSA Component Acceptance Notice 5A, IEC
60950–1 and IEC 60601–1 End Equipment
Standards
– TUV Certification per EN 61010-1 and EN
60950-1
– GB4943.1-2011 CQC Certification
2 Applications
• Isolated IGBT and MOSFET Drives in:
– Industrial Motor Control Drives
– Industrial Power Supplies
– Solar Inverters
– HEV and EV Power Modules
– Induction Heating
3 Description
The ISO5851 is a 5.7-kVRMS, reinforced isolated gate
driver for IGBTs and MOSFETs with 2.5-A source
and 5-A sink current. The input side operates from a
single 3-V to 5.5-V supply. The output side allows for
a supply range from minimum 15 V to maximum 30
V. Two complementary CMOS inputs control the
output state of the gate driver. The short propagation
time of 76 ns assures accurate control of the output
stage.
An internal desaturation (DESAT) fault detection
recognizes when the IGBT is in an overload
condition. Upon a DESAT detect, the gate driver
output is driven low to VEE2 potential, turning the
IGBT immediately off.
When desaturation is active, a fault signal is sent
across the isolation barrier, pulling the FLT output at
the input side low and blocking the isolator input. The
FLT output condition is latched and can be reset
through a low-active pulse at the RST input.
Device Information(1)
PART NUMBER PACKAGE
BODY SIZE (NOM)
ISO5851
SOIC (16)
10.30 mm × 7.50 mm
(1) For all available packages, see the orderable addendum at
the end of the datasheet.
VCC1
IN±
IN+
RDY
VCC1
FLT
VCC1
VCC1
RST
Functional Block Diagram
VCC1
VCC2
UVLO1
UVLO2
Mute
Ready
QS
Fault
QR
Decoder
Gate Drive
and
Encoder
Logic
500 µA
9V
VCC2
2V
DESAT
GND2
OUT
CLAMP
GND1
VEE2
Copyright © 2016, Texas Instruments Incorporated
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.




etcTI

ISO5851 Datasheet Preview

ISO5851 Datasheet

High-CMTI 2.5-A and 5-A Isolated IGBT MOSFET Gate Driver

No Preview Available !

ISO5851
SLLSEN5B – JUNE 2015 – REVISED JANUARY 2017
www.ti.com
Table of Contents
1 Features .................................................................. 1
2 Applications ........................................................... 1
3 Description ............................................................. 1
4 Revision History..................................................... 2
5 Description (continued)......................................... 4
6 Pin Configuration and Function ........................... 5
7 Specifications......................................................... 6
7.1 Absolute Maximum Ratings ...................................... 6
7.2 ESD Ratings.............................................................. 6
7.3 Recommended Operating Conditions....................... 6
7.4 Thermal Information .................................................. 6
7.5 Power Ratings........................................................... 7
7.6 Insulation Characteristics .......................................... 7
7.7 Safety-Related Certifications..................................... 8
7.8 Safety Limiting Values .............................................. 8
7.9 Electrical Characteristics........................................... 9
7.10 Switching Characteristics ...................................... 10
7.11 Insulation Characteristics Curves ......................... 11
7.12 Typical Characteristics .......................................... 12
8 Parameter Measurement Information ................ 18
9 Detailed Description ............................................ 20
9.1 Overview ................................................................. 20
9.2 Functional Block Diagram ....................................... 20
9.3 Feature Description................................................. 21
9.4 Device Functional Modes........................................ 22
10 Application and Implementation........................ 23
10.1 Application Information.......................................... 23
10.2 Typical Applications .............................................. 23
11 Power Supply Recommendations ..................... 33
12 Layout................................................................... 33
12.1 Layout Guidelines ................................................. 33
12.2 PCB Material ......................................................... 33
12.3 Layout Example .................................................... 33
13 Device and Documentation Support ................. 34
13.1 Documentation Support ........................................ 34
13.2 Receiving Notification of Documentation Updates 34
13.3 Community Resources.......................................... 34
13.4 Trademarks ........................................................... 34
13.5 Electrostatic Discharge Caution ............................ 34
13.6 Glossary ................................................................ 34
14 Mechanical, Packaging, and Orderable
Information ........................................................... 34
4 Revision History
Changes from Revision A (June 2015) to Revision B
Page
• Changed the Title From: "Active Safety Features" To: Active Protection Features" ............................................................. 1
• Changed Feature From: Surge Immunity 12800-VPK (according to IEC 61000-4-5) To: Isolation Surge Withstand
Voltage 12800-VPK.................................................................................................................................................................. 1
• Added the Power Ratings table ............................................................................................................................................. 7
• Moved Insulation Characteristics to the Specifications .......................................................................................................... 7
• Changed the Test Conditions and values for qpd in Insulation Characteristics ...................................................................... 7
• Changed RIO From: 100°C TA max To: 100°C TA 125°C in the Insulation Characteristics ....................................... 7
• Moved Safety-Related Certifications to the Specifications..................................................................................................... 8
• Changed the CSA status from planned to certified ................................................................................................................ 8
• Moved Safety Limiting Values to the Specifications............................................................................................................... 8
• Added the Reinforced High-Voltage Capacitor Life Time Projection figure to Insulation Characteristics Curves................ 11
• Changed the Thermal Derating Curve for Limiting Current per VDE figure and Added the Thermal Derating Curve
for Limiting Power per VDE figure ........................................................................................................................................ 11
• Added the ICC1 Supply Current vs Temperature figure to the Typical Characteristics ......................................................... 13
• Changed the OUT Propagation Delay, Non-Inverting Configuration figure ........................................................................ 18
• Changed the OUT Propagation Delay, Inverting Configuration figure ................................................................................. 18
• Added text ", but connecting CLAMP output of the gate driver to the IGBT gate is also not an issue." to Supply and
Active Miller Clamp............................................................................................................................................................... 21
• Changed the second paragraph of the Typical Applications ............................................................................................... 23
• Added text "and RST input signal" to Design Requirements .............................................................................................. 24
• Deleted text " and a 220-pF filtering capacitor." from Recommended ISO5851 Application Circuit ................................... 25
• Deleted text "thereby, providing protection against further catastrophic failures." From: the Global-Shutdown and
Reset section ........................................................................................................................................................................ 27
• Changed the Normal Operation - Bipolar Supply and Normal Operation - Unipolar Supply figures.................................... 32
2 Submit Documentation Feedback
Product Folder Links: ISO5851
Copyright © 2015–2017, Texas Instruments Incorporated


Part Number ISO5851
Description High-CMTI 2.5-A and 5-A Isolated IGBT MOSFET Gate Driver
Maker etcTI
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