• Part: ISO5852S-Q1
  • Description: High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT MOSFET Gate Driver
  • Category: MOSFET
  • Manufacturer: Texas Instruments
  • Size: 1.63 MB
Download ISO5852S-Q1 Datasheet PDF
Texas Instruments
ISO5852S-Q1
ISO5852S-Q1 is High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT MOSFET Gate Driver manufactured by Texas Instruments.
Features 1 Features - 1 Qualified for Automotive Applications - AEC-Q100 Qualified With the Following Results: - Device Temperature Grade 1: - 40°C to +125°C Ambient Operating Temperature Range - Device HBM Classification Level 3A - Device CDM Classification Level C6 - 100-k V/μs Minimum mon-Mode Transient Immunity (CMTI) at VCM = 1500 V - Split Outputs to Provide 2.5-A Peak Source and 5-A Peak Sink Currents - Short Propagation Delay: 76 ns (Typ), 110 ns (Max) - 2-A Active Miller Clamp - Output Short-Circuit Clamp - Soft Turn-Off (STO) during Short Circuit - Fault Alarm upon Desaturation Detection is Signaled on FLT and Reset Through RST - Input and Output Undervoltage Lockout (UVLO) with Ready (RDY) Pin Indication - Active Output Pulldown and Default Low Outputs with Low Supply or Floating Inputs - 2.25-V to 5.5-V Input Supply Voltage - 15-V to 30-V Output Driver Supply Voltage - CMOS patible Inputs - Rejects Input Pulses and Noise Transients Shorter Than 20 ns - Isolation Surge Withstand Voltage 12800-VPK - Safety-Related Certifications: - 8000-VPK VIOTM and 2121-VPK VIORM Reinforced Isolation per DIN V VDE V 0884-10 (VDE V 0884-10):2006-12 - 5700-VRMS Isolation for 1 Minute per UL 1577 - CSA ponent Acceptance Notice 5A, IEC 60950- 1 and IEC 60601- 1 End Equipment Standards - TUV Certification per EN 61010-1 and EN 60950-1 - GB4943.1-2011 CQC Certification - All Certifications plete per UL, VDE, CQC, TUV and Planned for CSA 2 Applications - Isolated IGBT and MOSFET Drives in: - HEV and EV Power Modules - Industrial Motor Control Drives - Industrial Power Supplies - Solar Inverters - Induction Heating 3 Description The ISO5852S-Q1 device is a 5.7-k VRMS, reinforced isolated gate driver for IGBTs and MOSFETs with split outputs, OUTH and OUTL, providing 2.5-A source and 5-A sink current. The input side operates from a single 2.25-V to 5.5-V supply. The output side allows for a supply range from minimum 15 V to maximum 30 V. Two plementary CMOS inputs control the output...