ISO5851 Datasheet | Texas Instruments

Features 1 Features - 1 100-k V/μs Minimum mon-Mode Transient Immunity (CMTI) at VCM = 1500 V - 2.5-A Peak Source and 5-A Peak Sink Currents - Short Propagation Delay: 76 ns (Typ), 110 ns (Max) - 2-A Active Miller Clamp - Output Short-Circuit Clamp - Fault Alarm upon Desaturation Detection is Signaled on FLT and Reset Through RST - Input and Output Undervoltage Lockout (UVLO) with Ready (RDY) Pin Indication - Active Output Pull-down and Default Low Outputs with Low Supply or Floating Inputs - 3-V to 5.5-V Input Supply Voltage - 15-V to 30-V Output Driver Supply Voltage - CMOS patible Inputs - Rejects Input Pulses and Noise Transients Shorter Than 20 ns - Operating Temperature: - 40°C to +125°C Ambient - Isolation Surge Withstand Voltage 12800-VPK - Safety-Related Certifications: - 8000-VPK VIOTM and 2121-VPK VIORM Reinforced Isolation per DIN V VDE V 0884-10 (VDE V 0884-10):2006-12 - 5700-VRMS Isolation for 1 Minute per UL 1577 - CSA ponent Acceptance Notice 5A, IEC 60950- 1 and IEC 60601- 1 End Equipment Standards - TUV Certification per EN 61010-1 and EN 60950-1 - GB4943.1-2011 CQC Certification 2 Applications - Isolated IGBT and MOSFET Drives in: - Industrial Motor Control Drives - Industrial Power Supplies - Solar Inverters - HEV and EV Power Modules - Induction Heating 3 Description The ISO5851 is a 5.7-k VRMS, reinforced isolated gate driver for IGBTs and MOSFETs with 2.5-A source and 5-A sink current. The input side operates from a single 3-V to 5.5-V supply. The output side allows for a supply range from minimum 15 V to maximum 30 V. Two plementary CMOS inputs control the output state of the gate driver. The short propagation time of 76 ns assures accurate control of the output stage. An internal desaturation (DESAT) fault detection recognizes when the IGBT is in an overload condition. Upon a DESAT detect, the gate driver output is driven low to VEE2 potential, turning the IGBT immediately off. When desaturation is active, a fault signal is sent across the...