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LM5110 - Dual 5-A Compound Gate Driver

General Description

The LM5110 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency.

Each “compound” output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5A peak from capacitive loads.

Key Features

  • 1 Independently Drives Two N-Channel MOSFETs.
  • Compound CMOS and Bipolar Outputs Reduce Output Current Variation.
  • 5A sink/3A Source Current Capability.
  • Two Channels can be Connected in Parallel to Double the Drive Current.
  • Independent Inputs (TTL Compatible).
  • Fast Propagation Times (25-ns Typical).
  • Fast Rise and Fall Times (14-ns/12-ns Rise/Fall With 2-nF Load).
  • Dedicated Input Ground Pin (IN_REF) for Split Supply or Single S.

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Product Folder Sample & Buy Technical Documents Tools & Software Support & Community LM5110 SNVS255B – MAY 2004 – REVISED SEPTEMBER 2016 LM5110 Dual 5-A Compound Gate Dri...

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– MAY 2004 – REVISED SEPTEMBER 2016 LM5110 Dual 5-A Compound Gate Driver With Negative Output Voltage Capability 1 Features •1 Independently Drives Two N-Channel MOSFETs • Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 5A sink/3A Source Current Capability • Two Channels can be Connected in Parallel to Double the Drive Current • Independent Inputs (TTL Compatible) • Fast Propagation Times (25-ns Typical) • Fast Rise and Fall Times (14-ns/12-ns Rise/Fall With 2-nF Load) • Dedicated Input Ground Pin (IN_REF) for Split Supply or Single Supply Operation • Outputs Swing from VCC to VEE Which Can Be Negative