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LM5110 - Dual 5A Compound Gate Driver

General Description

The LM5110 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency.

Each “compound” output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5A peak from capacitive loads.

Key Features

  • n Independently drives two N-Channel MOSFETs n Compound CMOS and bipolar outputs reduce output current variation Package n SOIC-8 n LLP-10 (4 mm x 4 mm) Ordering Information Order Number LM5110-1/2/3 M LM5110-1/2/3 MX LM5110-1/2/3 SD LM5110-1/2/3 SDX Package Type SOIC-8 SOIC-8 LLP-10 LLP-10 NSC Package Drawing M08A M08A SDC10A SDC10A Supplied As Shipped in anti-static units 2500 shipped in Tape & Reel 1000 shipped in Tape & Reel 4500 shipped in Tape & Reel © 2003 National Semiconductor Corpor.

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📁 Similar Datasheet

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LM5110 Dual 5A Compound Gate Driver with Negative Output Voltage Capability October 2003 LM5110 Dual 5A Compound Gate Driver with Negative Output Voltage Capability General Description The LM5110 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Each “compound” output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Separate input and output ground pins provide Negative Drive Capability allowing the user to drive MOSFET gates with positive and negative VGS voltages.