LM5112 Datasheet | National Semiconductor

LM5112 Tiny 7A MOSFET Gate Driver October 2004 LM5112 Tiny 7A MOSFET Gate Driver General Description The LM5112 MOSFET gate driver provides high peak gate drive current in the tiny LLP-6 package (SOT23 equivalent footprint) with improved package power dissipation required for high frequency operation. The pound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7A peak from capacitive loads. bining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Under-voltage lockout protection is provided to prevent damage to the MOSFET due to insufficient gate turn-on voltage. The LM5112 provides both inverting and non-inverting inputs to satisfy requirements for inverting and non-inverting gate drive with a single device type. Features n pound CMOS and bipolar outputs reduce output current variation n 7A sink/3A source current n Fast propagation times (25 ns typical) n Fast rise and fall times (14 ns/12 ns rise/fall with 2 n F load) n Inverting and non-inverting inputs provide either configuration with a single device n Supply rail under-voltage lockout protection n Dedicated input ground (IN_REF) for split supply or single supply operation n Power Enhanced 6-pin LLP package (3.0mm x 3.0mm) n Output swings from VCC to VEE which can be negative relative to input ground Block Diagram Block Diagram of LM5112 © 2004 National Semiconductor Corporation DS200668 .national. Pin Configurations LLP-6 Ordering Information Order Number LM5112-SD LM5112-SDX Package Type LLP-6 LLP-6 NSC Package Drawing SDE06A SDE06A Supplied As 1000 shipped in Tape & Reel 4500 shipped in Tape & Reel Pin Description Pin 1 2 IN VEE Name Description Non-inverting input pin Power ground for driver outputs Application Information TTL patible thresholds. Pull up to VCC when not used Connect to either power ground or a negative gate...