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LM5111 - Dual 5A Compound Gate Driver

General Description

The LM5111 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency.

Each “compound” output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5A peak from capacitive loads.

Key Features

  • n Independently drives two N-Channel MOSFETs n Compound CMOS and bipolar outputs reduce output current variation n 5A sink/3A source current capability n Two channels can be connected in parallel to double the drive current Package n SOIC-8 Pin Configurations 20112301 SOIC-8 © 2004 National Semiconductor Corporation DS201123 www. national. com LM5111 Ordering Information Order Number LM5111-1M LM5111-1MX LM5111-2M LM5111-2MX LM5111-3M LM5111-3MX Package Type SOIC-8 SOIC-8 SOIC-8 SOIC-8 SO.

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LM5111 Dual 5A Compound Gate DriverCapability July 2004 LM5111 Dual 5A Compound Gate Driver General Description The LM5111 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Each “compound” output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Undervoltage lockout protection is also provided. The drivers can be operated in parallel with inputs and outputs connected to double the drive current capability. This device is available in the SOIC-8 package.