Datasheet4U Logo Datasheet4U.com

LM5111 - Dual 5-A Compound Gate Driver

General Description

The LM5111 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency.

Each compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5-A peak from capacitive loads.

Key Features

  • 1 Independently Drives Two N-Channel MOSFETs.
  • Compound CMOS and Bipolar Outputs Reduce Output Current Variation.
  • 5-A Sink and 3-A Source Current Capability.
  • Two Channels can be Connected in Parallel to Double the Drive Current.
  • Independent Inputs (TTL Compatible).
  • Fast Propagation Times (25 ns Typical).
  • Fast Rise and Fall Times (14 ns and 12 ns Rise and Fall, Respectively, With 2-nF Load).
  • Available in Dual Noninverting, Dua.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Product Folder Order Now Technical Documents Tools & Software Support & Community Reference Design LM5111 SNVS300H – JULY 2004 – REVISED SEPTEMBER 2016 LM5111 Dual 5-A Compound Gate Driver 1 Features •1 Independently Drives Two N-Channel MOSFETs • Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 5-A Sink and 3-A Source Current Capability • Two Channels can be Connected in Parallel to Double the Drive Current • Independent Inputs (TTL Compatible) • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns and 12 ns Rise and Fall, Respectively, With 2-nF Load) • Available in Dual Noninverting, Dual Inverting and Combination Configurations • Supply Rail Undervoltage Lockout Protection (UVLO)ƒ • LM5111-4 UVLO Configured to Drive PFET through OUT_A and N