LM5111 Overview
The LM5111 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Each pound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5-A peak from capacitive loads. bining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature.
LM5111 Key Features
- 1 Independently Drives Two N-Channel MOSFETs
- pound CMOS and Bipolar Outputs Reduce
- 5-A Sink and 3-A Source Current Capability
- Independent Inputs (TTL patible)
- Fast Propagation Times (25 ns Typical)
- Fast Rise and Fall Times (14 ns and 12 ns Rise
- Available in Dual Noninverting, Dual Inverting and
- Supply Rail Undervoltage Lockout Protection
- LM5111-4 UVLO Configured to Drive PFET
- Pin patible With Industry Standard Gate
