LM5111 Datasheet | Texas Instruments

Product Folder Order Now Technical Documents Tools & Software Support & munity Reference Design SNVS300H - JULY 2004 - REVISED SEPTEMBER 2016 LM5111 Dual 5-A pound Gate Driver 1 Features - 1 Independently Drives Two N-Channel MOSFETs - pound CMOS and Bipolar Outputs Reduce Output Current Variation - 5-A Sink and 3-A Source Current Capability - Two Channels can be Connected in Parallel to Double the Drive Current - Independent Inputs (TTL patible) - Fast Propagation Times (25 ns Typical) - Fast Rise and Fall Times (14 ns and 12 ns Rise and Fall, Respectively, With 2-n F Load) - Available in Dual Noninverting, Dual Inverting and bination Configurations - Supply Rail Undervoltage Lockout Protection (UVLO)ƒ - LM5111-4 UVLO Configured to Drive PFET through OUT_A and NFET through OUT_B - Pin patible With Industry Standard Gate Drivers 3 Description The LM5111 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Each pound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5-A peak from capacitive loads. bining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Undervoltage lockout protection is also provided. The drivers can be operated in parallel with inputs and outputs connected to double the drive current capability. This device is available in the SOIC package or the thermally enhanced MSOPPower PAD package. Device Information(1) PART...