LM5110 Overview
The LM5110 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Each “pound” output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5A peak from capacitive loads. bining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature.
LM5110 Key Features
- 1 Independently Drives Two N-Channel MOSFETs
- pound CMOS and Bipolar Outputs Reduce
- 5A sink/3A Source Current Capability
- Independent Inputs (TTL patible)
- Fast Propagation Times (25-ns Typical)
- Fast Rise and Fall Times (14-ns/12-ns Rise/Fall
- Dedicated Input Ground Pin (IN_REF) for Split
- Outputs Swing from VCC to VEE Which Can Be
- Available in Dual Noninverting, Dual Inverting and
- Shutdown Input Provides Low Power Mode
