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LM5113 - Half Bridge GaN Driver

General Description

The LM5113 device is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck or a half bridge configuration.

The floating high-side driver is capable of driving a high-side enhancement mode GaN FET operating up to 100 V.

Key Features

  • 1 Independent high-side and low-side TTL logic inputs.
  • 1.2 A / 5 A peak source/sink current.
  • High-side floating bias voltage rail Operates up to 100 VDC.
  • Internal bootstrap supply voltage clamping.
  • Split outputs for adjustable turnon/turnoff strength.
  • 0.6-Ω / 2.1-Ω pulldown/pullup resistance.
  • Fast propagation times (28 ns typical).
  • Excellent propagation delay matching (1.5 ns typical).
  • Supply rail undervoltage locko.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Product Folder Order Now Technical Documents Tools & Software Support & Community LM5113 SNVS725I – JUNE 2011 – REVISED OCTOBER 2019 LM5113 80-V, 1.2-A, 5-A, Half Bridge GaN Driver 1 Features •1 Independent high-side and low-side TTL logic inputs • 1.2 A / 5 A peak source/sink current • High-side floating bias voltage rail Operates up to 100 VDC • Internal bootstrap supply voltage clamping • Split outputs for adjustable turnon/turnoff strength • 0.6-Ω / 2.1-Ω pulldown/pullup resistance • Fast propagation times (28 ns typical) • Excellent propagation delay matching (1.