LM5113 Description
The LM5113 device is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of driving a high-side enhancement mode GaN FET operating up to 100 V. The high-side bias voltage is generated using a bootstrap technique and is internally clamped at 5.2 V, which prevents the gate...
LM5113 Key Features
- 1 Independent high-side and low-side TTL logic inputs
- 1.2 A / 5 A peak source/sink current
- High-side floating bias voltage rail
- Internal bootstrap supply voltage clamping
- Split outputs for adjustable
- 0.6-Ω / 2.1-Ω pulldown/pullup resistance
- Fast propagation times (28 ns typical)
- Excellent propagation delay matching
- Supply rail undervoltage lockout
- Low power consumption