LM5113 Overview
Key Specifications
Package: Module
Description
The LM5113 device is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of driving a high-side enhancement mode GaN FET operating up to 100 V.
Key Features
- 1 Independent high-side and low-side TTL logic inputs
- 1.2 A / 5 A peak source/sink current
- High-side floating bias voltage rail Operates up to 100 VDC
- Internal bootstrap supply voltage clamping
- Split outputs for adjustable turnon/turnoff strength
