LM5113 Datasheet | Texas Instruments

Product Folder Order Now Technical Documents Tools & Software Support & munity SNVS725I - JUNE 2011 - REVISED OCTOBER 2019 LM5113 80-V, 1.2-A, 5-A, Half Bridge Ga N Driver 1 Features - 1 Independent high-side and low-side TTL logic inputs - 1.2 A / 5 A peak source/sink current - High-side floating bias voltage rail Operates up to 100 VDC - Internal bootstrap supply voltage clamping - Split outputs for adjustable turnon/turnoff strength - 0.6-Ω / 2.1-Ω pulldown/pullup resistance - Fast propagation times (28 ns typical) - Excellent propagation delay matching (1.5 ns typical) - Supply rail undervoltage lockout - Low power consumption 2 Applications - Merchant tele rectifiers - Merchant DC/DC - Closed loop stepper motor drive - Baseband unit (BBU) - Macro remote radio unit (RRU) 3 Description The LM5113 device is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (Ga N) FETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of driving a high-side enhancement mode Ga N FET operating up to 100 V. The high-side bias voltage is generated using a bootstrap technique and is internally clamped at 5.2 V, which prevents the gate voltage from exceeding the maximum gatesource voltage rating of enhancement mode Ga N FETs. The inputs of the LM5113 are TTL logic patible, and can withstand input voltages up to 14 V regardless of the VDD voltage. The LM5113 has split gate outputs, providing flexibility to adjust the turnon and turnoff strength...