*1 Integrated 15-mΩ GaN FETs and Driver
* 80-V Continuous, 100-V Pulsed Voltage Rating
* Package Optimized for Easy PCB Layout,
Eliminating Need for Underfill.
* Gate Driver Capable of Up to 10 MHz Switching
* Internal Bootstrap Supply Voltage Clamping to Prevent GaN FET .
The LMG5200 device, an 80-V, 10-A driver plus GaN half-bridge power stage, provides an integrated power stage solution using enhancement-mode Gallium Nitride (GaN) FETs. The device consists of two 80-V GaN FETs driven by one high-frequency GaN FET dr.
Image gallery
TAGS
Manufacturer
Related datasheet
