TMS320C6413 Datasheet | Texas Instruments

Features , 32- Bit External Memory Interface (EMIF) section: Changed “1024M- Byte Total Addressable Memory Space” to “512M- Byte Total Addressable Memory Space” 15 Description section: Updated “With performance of up to 3200 million...” paragraph 23 Functional Overview , Memory Map Summary, TMS320C6413/C6410 Memory Map Summary table: Updated Table 47 Device Configurations, Device Configuration at Device Reset, section: Added Note 48 Device Configurations, Device Configuration at Device Reset, C6413/C6410 Device Configuration Pins (TOUT1/LENDIAN, AEA[22:19], TOUT0/HPI_EN, HD5, CLKINSEL, and OSC_DIS) table: Updated AEA(22:21) Configuration Functional Description for 11 to “EMIFA 8- bit ROM boot” 55 Device Configurations, Device Status Register Description , Device Status (DEVSTAT) Register Selection Bit Descriptions table: Updated BOOTMODE0 and BOOTMODE1 Description for 11 to “EMIFA 8- bit ROM boot” 57 Device Configurations, Debugging Considerations section: Deleted paragraphs and added Note 60 Device Configurations, Terminal Functions, Terminal Functions table, CLOCK/PLL CONFIGURATION section: OSCVDD Signal Name: Changed Description from “Power for crystal oscillator (1.2 V), Do not connect to board power 1.4 V; “ to “Power for crystal oscillator (1.2 V), Do not connect to board power CVDD; “ 61 Device Configurations, Terminal Functions, Terminal Functions table, RESETS, INTERRUPTS, AND GENERAL- PURPOSE INPUT/OUTPUTS section, NMI Signal Name: Updated Description 63 Terminal Functions table, EMIFA (32 BIT) - ADDRESS section: Description for AEA22 to AEA3: Added Note Updated AEA(22:3) Description for Boot mode (AEA[21:22]) - 11 to “EMIFA 8- bit ROM boot” 91 Peripherals Detailed Description , IEEE 1149.1 JTAG patibility Statement section: Updated paragraphs for clarity 93 Device Electrical Specifications, Remended Operating Conditions table: Updated VOS, Maximum voltage during overshoot row Added VUS, Minimum voltage during undershoot row 96 Parameter Measurement...