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TMS416400A Datasheet Preview

TMS416400A Datasheet

DYNAMIC RANDOM-ACCESS MEMORIES

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This data sheet is applicable to all
TMS41x400As symbolized by Revision “B”,
Revision “E” and subsequent revisions as
described in the device symbolization section.
D Organization . . . 4 194304 × 4
D Single 5-V Power Supply (±10% Tolerance)
D 2 048-Cycle Refresh in 32 ms for
TMS417400A
D 4 096-Cycle Refresh in 64 ms for
TMS416400A
D Performance Ranges:
ACCESS ACCESS ACCESS READ OR
TIME TIME TIME WRITE
tRAC
MAX
tCAC
MAX
tAA CYCLE
MAX MIN
’41x400A-50
50 ns 13 ns
25 ns 90 ns
’41x400A-60
60 ns 15 ns
30 ns 110 ns
’41x400A-70
70 ns 18 ns
35 ns 130 ns
D Enhanced Page-Mode Operation With
CAS-Before-RAS ( CBR) Refresh
D 3-State Unlatched Output
D Low Power Dissipation
D High-Reliability Plastic 24 / 26-Lead
300-Mil-Wide Surface-Mount Small-Outline
J-Lead (SOJ) Package (DJ Suffix)
D Ambient Temperature Range:
0°C to 70°C
TMS416400A, TMS417400A
4194304 BY 4-BIT
DYNAMIC RANDOM-ACCESS MEMORIES
SMKS889B – AUGUST 1996 – REVISED OCTOBER 1997
DJ PACKAGE
( TOP VIEW )
VCC
DQ1
DQ2
W
RAS
A11
1
2
3
4
5
6
26 VSS
25 DQ4
24 DQ3
23 CAS
22 OE
21 A9
A10
A0
A1
A2
A3
VCC
8
9
10
11
12
13
19 A8
18 A7
17 A6
16 A5
15 A4
14 VSS
PIN NOMENCLATURE
A[0: 11]†
CAS
DQ[1:4]
OE
NC
RAS
VCC
VSS
W
Address Inputs
Column-Address Strobe
Data In / Data Out
Output Enable
No Internal Connection
Row-Address Strobe
5-V Supply
Ground
Write Enable
A11 is NC for TMS417400A
description
The TMS41x400A is a set of 16 777 216-bit dynamic random-access memory (DRAMs) devices organized as
4 194 304 words of 4 bits each. The TMS41x400A employs state-of-the-art technology for high performance,
reliability, and low power.
These devices feature maximum RAS access times of 50-, 60-, and 70 ns. All address and data-in lines are
latched on-chip to simplify system design. Data out is unlatched to allow greater system flexibility.
The TMS416400A and TMS417400A are offered in a 24 / 26-lead plastic surface-mount SOJ package
(DJ suffix). This package is designed for operation from 0°C to 70°C.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright © 1997, Texas Instruments Incorporated
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251–1443
1




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TMS416400A Datasheet Preview

TMS416400A Datasheet

DYNAMIC RANDOM-ACCESS MEMORIES

No Preview Available !

TMS416400A, TMS417400A
4194304 BY 4-BIT
DYNAMIC RANDOM-ACCESS MEMORIES
SMKS889B – AUGUST 1996 – REVISED OCTOBER 1997
logic symbol (TMS416400A)
A0 9
A1 10
A2 11
A3 12
A4 15
A5 16
A6 17
A7 18
A8 19
A9 21
A10 8
A11 6
RAS 5
23
CAS
4
W
22
OE
RAM 4096 K × 4
20D10/21D0
A0
4 194 303
20D19/21D9
20D20
20D21
C20 [ROW]
G23/[REFRESH ROW]
24 [PWR DWN]
C21[COLUMN]
G24
&
23C22
23,21D
G25
24,25 EN
2
DQ1
DQ2
DQ3
DQ4
3
24
25
A,22D
26
A,Z26
This symbol is in accordance with ANSI/IEEE Std 91-1984 and IEC Publication 647-12.
2 POST OFFICE BOX 1443 HOUSTON, TEXAS 77251–1443


Part Number TMS416400A
Description DYNAMIC RANDOM-ACCESS MEMORIES
Maker etcTI
Total Page 27 Pages
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