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TMS428169A Datasheet Preview

TMS428169A Datasheet

DYNAMIC RANDOM-ACCESS MEMORIES

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This data sheet is applicable to TMS418169A
and TMS428169A symbolized by Revision “E”,
and subsequent revisions as described in the
device symbolization section.
D Organization . . . 1 048576 by 16 Bits
D Single 5-V Power Supply for TMS418169A
(± 10% Tolerance)
D Single 3.3-V Power Supply for TMS428169A
(± 0.3 V Tolerance)
D 1 024-Cycle Refresh in 16 ms
D Performance Ranges:
ACCESS ACCESS ACCESS READ OR
TIME TIME TIME
EDO
tRAC tCAC
MAX MAX
tAA
MAX
CYCLE
MIN
’418169A-50 50 ns 13 ns 25 ns 20 ns
’418169A-60 60 ns 15 ns 30 ns 25 ns
’418169A-70 70 ns 18 ns 35 ns 30 ns
’428169A-60 60 ns 15 ns 30 ns 25 ns
’428169A-70 70 ns 18 ns 35 ns 30 ns
D Extended-Data-Out (EDO) Operation
D xCAS-Before-RAS ( xCBR) Refresh
D 3-State Unlatched Output
D Low Power Dissipation
D High-Reliability Plastic 42-Lead
400-Mil-Wide Surface-Mount Small-Outline
J-Lead (SOJ) Package (DZ Suffix) and
44/50-Lead Surface-Mount Thin
Small-Outline Package ( TSOP) (DGE Suffix)
D Ambient Temperature Range
0°C to 70°C
TMS418169A, TMS428169A
1048576 BY 16-BIT EXTENDED DATA OUT
DYNAMIC RANDOM-ACCESS MEMORIES
SMKS892C – AUGUST 1996 – REVISED SEPTEMBER 1997
DZ PACKAGE
( TOP VIEW )
DGE PACKAGE
( TOP VIEW )
VCC
DQ0
DQ1
DQ2
DQ3
VCC
DQ4
DQ5
DQ6
DQ7
NC
NC
W
RAS
NC
NC
A0
A1
A2
A3
VCC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
42 VSS
41 DQ15
40 DQ14
39 DQ13
38 DQ12
37 VSS
36 DQ11
35 DQ10
34 DQ9
33 DQ8
32 NC
31 LCAS
30 UCAS
29 OE
28 A9
27 A8
26 A7
25 A6
24 A5
23 A4
22 VSS
VCC
DQ0
DQ1
DQ2
DQ3
VCC
DQ4
DQ5
DQ6
DQ7
NC
1
2
3
4
5
6
7
8
9
10
11
50 VSS
49 DQ15
48 DQ14
47 DQ13
46 DQ12
45 VSS
44 DQ11
43 DQ10
42 DQ9
41 DQ8
40 NC
NC
NC
W
RAS
NC
NC
A0
A1
A2
A3
VCC
15
16
17
18
19
20
21
22
23
24
25
36 NC
35 LCAS
34 UCAS
33 OE
32 A9
31 A8
30 A7
29 A6
28 A5
27 A4
26 VSS
description
PIN NOMENCLATURE
The TMS418169A and TMS428169A are
16 777 216-bit dynamic random-access memory
(DRAM) devices organized as 1 048 576 words of
A[0:9]
DQ[0:15]
LCAS
UCAS
Address Inputs
Data In / Data Out
Lower Column-Address Strobe
Upper Column-Address Strobe
16 bits each. They employ state-of-the-art NC No Internal Connection
technology for high performance, reliability, and
low power at low cost.
The TMS418169A features maximum RAS
access times of 50-, 60-, and 70 ns, and the
OE
RAS
VCC
VSS
W
Output Enable
Row-Address Strobe
5-V or 3.3-V Supply
Ground
Write Enable
TMS428169A features maximum RAS access
times of 60- and 70 ns. All addresses and data-in lines are latched on-chip to simplify system design. Data out
is unlatched to allow greater system flexibility.
The TMS418169A is offered in a 42-lead plastic surface-mount SOJ package (DZ suffix). The TMS428169A
is offered in a 44/50-lead plastic surface-mount TSOP (DGE suffix). These packages are designed for operation
from 0°C to 70°C.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright © 1997, Texas Instruments Incorporated
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251–1443
1




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TMS428169A Datasheet Preview

TMS428169A Datasheet

DYNAMIC RANDOM-ACCESS MEMORIES

No Preview Available !

TMS418169A, TMS428169A
1048576 BY 16-BIT EXTENDED DATA OUT
DYNAMIC RANDOM-ACCESS MEMORIES
SMKS892C – AUGUST 1996 – REVISED SEPTEMBER 1997
logic symbol (TMS418169A and TMS428169A)
A0 17
A1 18
A2 19
A3 20
A4 23
A5 24
A6
A7
25
26
A8
A9
27
28
RAM 1M × 16
20D10/21D0
A
1
0
048
575
20D19 / 21D9
RAS 14
LCAS 31
C20[ROW]
G23/[REFRESH ROW]
24[PWR DWN]
C21
G24
&
31 23C22
UCAS 30
W 13
OE 29
DQ0 2
DQ1 3
DQ2 4
DQ3 5
DQ4 7
DQ5 8
DQ6 9
DQ7 10
DQ8 33
DQ9 34
DQ10 35
DQ11 36
DQ12 38
DQ13 39
DQ14 40
DQ15 41
C21
G34
&
31
Z31
23,21D
25
A,22D
26,27
23C32
24,25EN27
34,25EN37
A, Z26
A,32D
36,37
A, Z36
This symbol is in accordance with ANSI/IEEE Std 91-1984 and IEC Publication 617-12.
The pin numbers shown correspond to the DZ package.
2 POST OFFICE BOX 1443 HOUSTON, TEXAS 77251–1443


Part Number TMS428169A
Description DYNAMIC RANDOM-ACCESS MEMORIES
Maker etcTI
Total Page 29 Pages
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