TMS44409P, TMS44409 Datasheet - Texas Instruments

TMS44409P DYNAMIC RANDOM-ACCESS MEMORIES

ADVANCE INFORMATION TMS44409, TMS44409P 1048576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY SMHS563 JULY1995 D Organization . . . 1 048576 × 4 D Single 5-V Power Supply (±10% Tolerance) DJ PACKAGE ( TOP VIEW ) DGA PACKAGE ( TOP VIEW ) D Performance Ranges: ACCESS TIME (tRAC) (MAX) ’44409 / P-60 60 ns ’44409 / P-70 70 ns ACCESS TIME (tCAC) (MAX) 15 ns 18 ns ACCESS TIME (tAA) (MAX) 30 ns 35 ns EDO CYCLE (tHPC) (MIN) 25 ns 30 ns DQ1 DQ2 W RAS A9 1 2 3 4 5 26 VSS 25 DQ4 24 DQ3 2.

TMS44409P Features

* maximum RAS access times of 60 ns, 70 ns and 80 ns. Maximum power consumption is as low as 385 mW operating and 6 mW standby. All inputs and outputs, including clocks, are compatible with Series 74 TTL. All addresses and data-in lines are latched on chip to simplify system design. Data out is u

TMS44409-etcTI.pdf