Datasheet4U Logo Datasheet4U.com

TMS44409P Datasheet DYNAMIC RANDOM-ACCESS MEMORIES

Manufacturer: Texas Instruments

Download the TMS44409P datasheet PDF. This datasheet also includes the TMS44409 variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (TMS44409-etcTI.pdf) that lists specifications for multiple related part numbers.

General Description

OE RAS Output Enable Row-Address Strobe The TMS44409 is a high-speed 4 194 304-bit dynamic random-access memory (DRAM) organized as 1 048 576 words of four bits each.

This VCC VSS W 5-V Supply Ground Write Enable device

Overview

ADVANCE INFORMATION TMS44409, TMS44409P 1048576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY SMHS563 – JULY1995 D Organization .

.

.

Key Features

  • maximum RAS access times of 60 ns, 70 ns and 80 ns. Maximum power consumption is as low as 385 mW operating and 6 mW standby. All inputs and outputs, including clocks, are compatible with Series 74 TTL. All addresses and data-in lines are latched on chip to simplify system design. Data out is unlatched to allow greater system flexibility. The TMS44409P is a high-speed, low-power, self-refresh version of the TMS44409 DRAM. All versions of the TMS44409 / P are offered in a 300-mil 20 / 26 J.

More Datasheets from Texas Instruments

Part Number Description
TMS44409 DYNAMIC RANDOM-ACCESS MEMORIES
TMS44400 DYNAMIC RANDOM-ACCESS MEMORIES
TMS44400P DYNAMIC RANDOM-ACCESS MEMORIES
TMS44100 DYNAMIC RANDOM-ACCESS MEMORIES
TMS44100P DYNAMIC RANDOM-ACCESS MEMORIES
TMS44C251 4-Bit Multiport Video RAM
TMS44C256 4-Bit DRAM
TMS44C257 4-Bit DRAM
TMS416100 DYNAMIC RANDOM-ACCESS MEMORIES
TMS416100P DYNAMIC RANDOM-ACCESS MEMORIES