TMS44409 - DYNAMIC RANDOM-ACCESS MEMORIES

Product Overview

Texas Instruments

Datasheet Details

Part number	TMS44409
Manufacturer	Texas Instruments
File Size	399.03 KB
Description	DYNAMIC RANDOM-ACCESS MEMORIES
Datasheet	TMS44409 Datasheet
Additional preview pages of the TMS44409 datasheet.

Product details

Description

OE RAS Output Enable Row-Address Strobe The TMS44409 is a high-speed 4 194 304-bit dynamic random-access memory (DRAM) organized as 1 048 576 words of four bits each.This VCC VSS W 5-V Supply Ground Write Enable device

Features

maximum RAS access times of 60 ns, 70 ns and 80 ns. Maximum power consumption is as low as 385 mW operating and 6 mW standby. All inputs and outputs, including clocks, are compatible with Series 74 TTL. All addresses and data-in lines are latched on chip to simplify system design. Data out is unlatched to allow greater system flexibility. The TMS44409P is a high-speed, low-power, self-refresh version of the TMS44409 DRAM. All versions of the TMS44409 / P are offered in a 300-mil 20 / 26 J.

📁 Similar Datasheet

TMS4116 - 16384-Bin Dynamic Random-Access Memory (Texas Instruments Inc)
TMS416409A - 4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES (National Semiconductor)
TMS417409A - 4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES (National Semiconductor)
TMS426409A - 4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES (National Semiconductor)
TMS427409A - 4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES (National Semiconductor)
TMS-108-xx - Micro Strips (Samtec)
TMS06105 - AC/DC Power Modules (TRACO POWER)
TMS06112 - AC/DC Power Modules (TRACO POWER)

Other Datasheets by Texas Instruments

TMS44409P - DYNAMIC RANDOM-ACCESS MEMORIES
TMS44400 - DYNAMIC RANDOM-ACCESS MEMORIES
TMS44400P - DYNAMIC RANDOM-ACCESS MEMORIES
TMS44100 - DYNAMIC RANDOM-ACCESS MEMORIES
TMS44100P - DYNAMIC RANDOM-ACCESS MEMORIES
TMS44C251 - 4-Bit Multiport Video RAM

Published: Sep 9, 2019 |