TMS44409P Description
OE RAS Output Enable Row-Address Strobe The TMS44409 is a high-speed 4 194 304-bit dynamic random-access memory (DRAM) organized as 1 048 576 words of four bits each. This VCC VSS W 5-V Supply Ground Write Enable device.
TMS44409P Key Features
- POST OFFICE BOX 1443 HOUSTON, TEXAS 77251-1443
- JULY1995
- 2 POST OFFICE BOX 1443 HOUSTON, TEXAS 77251-1443