BSM150GB170DLC
BSM150GB170DLC is IGBT manufactured by eupec.
Technische Information / Technical Information
IGBT-Module IGBT-Modules
BSM 150 GB 170 DLC
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung collector-emitter voltage
Kollektor-Dauergleichstrom DC-collector current
Periodischer Kollektor Spitzenstrom repetitive peak collctor current
TC = 80 °C TC = 25 °C t P = 1 ms, TC = 80°C
Gesamt-Verlustleistung total power dissipation
TC=25°C, Transistor
Gate-Emitter-Spitzenspannung gate-emitter peak voltage
Dauergleichstrom DC forward current
Periodischer Spitzenstrom repetitive peak forw. current tp = 1 ms
Grenzlastintegral der Diode I2t
- value, Diode
VR = 0V, tp = 10ms, TVj = 125°C
Isolations-Prüfspannung insulation test voltage
RMS, f = 50 Hz, t = 1 min.
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage
Gate-Schwellenspannung gate threshold voltage
IC = 150A, VGE = 15V, Tvj = 25°C IC = 150A, VGE = 15V, Tvj = 125°C
IC = 7m A, VCE = VGE, Tvj = 25°C
Gateladung gate charge
VGE = -15V ... +15V
Eingangskapazität input capacitance f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V
Rückwirkungskapazität reverse transfer capacitance
Kollektor-Emitter Reststrom collector-emitter cut-off current f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V VCE = 1700V, VGE = 0V, Tvj = 25°C VCE = 1700V, VGE = 0V, Tvj =...
