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BSM200GB170DLC Datasheet Preview

BSM200GB170DLC Datasheet

IGBT Module

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Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM 200 GB 170 DLC
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Tvj = 25°C
Kollektor-Dauergleichstrom
DC-collector current
TC = 80 °C
TC = 25 °C
Periodischer Kollektor Spitzenstrom
repetitive peak collctor current
tP = 1 ms, TC = 80°C
Gesamt-Verlustleistung
total power dissipation
TC = 25°C, Transistor
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
tp = 1 ms
Grenzlastintegral der Diode
I2t - value, Diode
VR = 0V, tp = 10ms, Tvj = 125°C
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
VCES
IC,nom.
IC
ICRM
Ptot
VGES
IF
IFRM
I2t
VISOL
1700
200
400
400
1660
+/- 20V
200
400
11
3,4
V
A
A
A
W
V
A
A
k A2s
kV
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
IC = 200A, VGE = 15V, Tvj = 25°C
IC = 200A, VGE = 15V, Tvj = 125°C
Gate-Schwellenspannung
gate threshold voltage
IC = 9mA, VCE = VGE, Tvj = 25°C
Gateladung
gate charge
VGE = -15V ... +15V
Eingangskapazität
input capacitance
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V
Rückwirkungskapazität
reverse transfer capacitance
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V
Kollektor-Emitter Reststrom
collector-emitter cut-off current
VCE = 1700V, VGE = 0V, Tvj = 25°C
Gate-Emitter Reststrom
gate-emitter leakage current
VCE = 0V, VGE = 20V, Tvj = 25°C
prepared by: Alfons Wiesenthal
approved by: Dr. Schilling
date of publication: 2002-07-04
revision: 3
VCE sat
min.
-
-
typ.
2,6
3,1
max.
3,2
3,6
VGE(th)
4,5
5,5
6,5
V
V
V
QG - 2,4 - µC
Cies - 15 - nF
Cres - 0,7 - nF
ICES
-
-
5 mA
IGES
-
- 400 nA
1(8)
BSM200GB170DLC_3.xls




eupec

BSM200GB170DLC Datasheet Preview

BSM200GB170DLC Datasheet

IGBT Module

No Preview Available !

Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM 200 GB 170 DLC
Charakteristische Werte / Characteristic values
Transistor / Transistor
Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)
Anstiegszeit (induktive Last)
rise time (inductive load)
Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)
Fallzeit (induktive Last)
fall time (inductive load)
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
Kurzschlußverhalten
SC Data
Modulinduktivität
stray inductance module
IC = 200A, VCE = 900V
VGE = ±15V, RG = 7,5W, Tvj = 25°C
VGE = ±15V, RG = 7,5W, Tvj = 125°C
IC = 200A, VCE = 900V
VGE = ±15V, RG = 7,5W, Tvj = 25°C
VGE = ±15V, RG = 7,5W, Tvj = 125°C
IC = 200A, VCE = 900V
VGE = ±15V, RG = 7,5W, Tvj = 25°C
VGE = ±15V, RG = 7,5W, Tvj = 125°C
IC = 200A, VCE = 900V
VGE = ±15V, RG = 7,5W, Tvj = 25°C
VGE = ±15V, RG = 7,5W, Tvj = 125°C
IC = 200A, VCE = 900V, VGE = ±15V
RG = 7,5W, Tvj = 125°C, Ls = 60nH
IC = 200A, VCE = 900V, VGE = ±15V
RG = 7,5W, Tvj = 125°C, Ls = 60nH
tP £ 10µsec, VGE £ 15V, RG = 7,5W
TVj£125°C, VCC=1000V, VCEmax=VCES -LsCE ·di/dt
Anschlüsse / terminals: 2 - 3
Modulleitungswiderstand, Anschlüsse - Chip
module lead resistance, terminals - chip
pro Zweig / per arm, TC = 25°C
min. typ. max.
td,on
- 0,10 -
µs
- 0,10 -
µs
tr
- 0,10 -
µs
- 0,10 -
µs
td,off
- 0,80 -
µs
- 0,90 -
µs
tf
- 0,03 -
µs
- 0,03 -
µs
Eon - 90 - mJ
Eoff - 65 - mJ
ISC
LsCE
- 800 -
A
- 20 - nH
RCC'+EE'
-
0,60
-
mW
Charakteristische Werte / Characteristic values
Diode / Diode
Durchlaßspannung
forward voltage
Rückstromspitze
peak reverse recovery current
Sperrverzögerungsladung
recovered charge
Abschaltenergie pro Puls
reverse recovery energy
IF = 200A, VGE = 0V, Tvj = 25°C
IF = 200A, VGE = 0V, Tvj = 125°C
IF = 200A, - diF/dt = 2300A/µs
VR = 900V, VGE = -15V, Tvj = 25°C
VR = 900V, VGE = -15V, Tvj = 125°C
IF = 200A, - diF/dt = 2300A/µs
VR = 900V, VGE = -15V, Tvj = 25°C
VR = 900V, VGE = -15V, Tvj = 125°C
IF = 200A, - diF/dt = 2300A/µs
VR = 900V, VGE = -15V, Tvj = 25°C
VR = 900V, VGE = -15V, Tvj = 125°C
min. typ. max.
VF
-
2,1 2,5
V
-
2,1 2,5
V
IRM
- 160 -
A
- 200 -
A
Qr - 60 - µC
- 105 - µC
Erec - 25 - mJ
- 50 - mJ
2(8)
BSM200GB170DLC_3.xls


Part Number BSM200GB170DLC
Description IGBT Module
Maker eupec
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