BSM25GD120DN2 Datasheet PDF

MAXIMUM RATINGS

Parameter Collector-emitter voltage Collector-gate voltage RGE = 20 kΩ Gate-emitter voltage DC collector current TC = 25 °C TC = 80 °C Pulsed collector current, tp = 1 ms TC = 25 °C TC = 80 °C Power dissipation per IGBT TC = 25 °C Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Insulation test voltage, t = 1min. Creepage distance Clearance DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJCD Vis Ptot 200 + 150 -40 ... + 125 ≤ 0.6 ≤1 2500 16 11 F 40 / 125 / 56 sec Vac mm K/W °C ICpuls 70 50 W VGE IC 35 25 Symbol VCE VCGR 1200 ± 20 A Values 1200 Unit V VCE IC Package ECONOPACK 2 ECONOPACK 2K Ordering Code C67076-A2505-A67 C67070-A2505-A67 1200V 35A 1200V 35A 1 Oct-20-1997 BSM 25 GD 120 DN2

ELECTRICAL CHARACTERISTICS

, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage VGE = VCE, IC = 1 mA Collector-emitter saturation voltag...