BSM25GD120DN2 Datasheet PDF

MAXIMUM RATINGS

Parameter Collector-emitter voltage Collector-gate voltage RGE = 20 kΩ Gate-emitter voltage DC collector current TC = 25 °C TC = 80 °C Pulsed collector current, tp = 1 ms TC = 25 °C TC = 80 °C Power dissipation per IGBT TC = 25 °C Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Insulation test voltage, t = 1min. Creepage distance Clearance DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol VCE VCGR VGE IC ICpuls Ptot Tj Tstg RthJC RthJCD Vis - Ordering Code C67076-A2505-A67 C67070-A2505-A67 Values 1200 Unit V 1200 ± 20 35 25 A 70 50 200 + 150 -40 ... + 125 ≤ 0.6 ≤1 2500 16 11 F 40 / 125 / 56 W °C K/W Vac mm sec 1 2006-01-31 BSM 25 GD 120 DN2

ELECTRICAL CHARACTERISTICS

, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. max. Static Characteristics Gate threshold voltage VGE(th) VGE = VCE, IC = 1 mA 4.5 5.5 6.5 Collector-emitter saturation voltage VCE(sat) VGE = 15 V,...