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FP50R12KS4C Datasheet Preview

FP50R12KS4C Datasheet

IGBT-Module

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Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FP50R12KS4C
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Diode Gleichrichter/ Diode Rectifier
Periodische Rückw. Spitzensperrspannung
repetitive peak reverse voltage
Durchlaßstrom Grenzeffektivwert
RMS forward current per chip
Dauergleichstrom
DC forward current
Stoßstrom Grenzwert
surge forward current
Grenzlastintegral
I2t - value
TC = 80°C
tP = 10 ms,
tP = 10 ms,
tP = 10 ms,
tP = 10 ms,
Tvj = 25°C
Tvj = 150°C
Tvj = 25°C
Tvj = 150°C
Transistor Wechselrichter/ Transistor Inverter
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
Tc = 80 °C
TC = 25 °C
tP = 1 ms,
Gesamt-Verlustleistung
total power dissipation
TC = 25°C
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
TC =
Diode Wechselrichter/ Diode Inverter
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
Grenzlastintegral
I2t - value
Tc = 80 °C
tP = 1 ms
VR = 0V, tp = 10ms, Tvj = 125°C
Transistor Brems-Chopper/ Transistor Brake-Chopper
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
TC = 80 °C
TC = 25 °C
tP = 1 ms, TC = 80°C
Gesamt-Verlustleistung
total power dissipation
TC = 25°C
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Diode Brems-Chopper/ Diode Brake-Chopper
Dauergleichstrom
DC forward current
Tc = 80 °C
Periodischer Spitzenstrom
repetitive peak forw. current
tP = 1 ms
80 °C
prepared by: A.Schulz
approved by: M.Hierholzer
date of publication: 2001-11-28
revision: 2
VRRM
IFRMSM
Id
IFSM
I2t
VCES
IC,nom.
IC
ICRM
Ptot
VGES
IF
IFRM
I2t
VCES
IC,nom.
IC
ICRM
Ptot
VGES
IF
IFRM
1600
40
50
500
400
1250
800
1200
50
70
100
360
+/- 20V
50
100
1.200
1200
25
45
50
230
+/- 20V
15
30
V
A
A
A
A
A2s
A2s
V
A
A
A
W
V
A
A
A2s
V
A
A
A
W
V
A
A
1/11
DB-PIM-S_IGBT_V2.xls
2001-11-28




eupec

FP50R12KS4C Datasheet Preview

FP50R12KS4C Datasheet

IGBT-Module

No Preview Available !

Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FP50R12KS4C
Modul Isolation/ Module Isolation
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
NTC connected to Baseplate
VISOL
2,5
kV
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
Diode Gleichrichter/ Diode Rectifier
Durchlaßspannung
forward voltage
Tvj = 150°C,
Schleusenspannung
threshold voltage
Tvj = 150°C
Ersatzwiderstand
slope resistance
Tvj = 150°C
Sperrstrom
reverse current
Tvj = 150°C,
Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip
TC = 25°C
IF =
VR =
Transistor Wechselrichter/ Transistor Inverter
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
VGE = 15V, Tvj = 25°C,
VGE = 15V, Tvj = 125°C,
Gate-Schwellenspannung
gate threshold voltage
VCE = VGE, Tvj = 25°C,
IC =
IC =
IC =
Eingangskapazität
input capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
f = 1MHz, Tvj = 25°C
VCE = 25 V, VGE = 0 V
VGE = 0V, Tvj = 25°C, VCE =
Gate-Emitter Reststrom
gate-emitter leakage current
Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)
Anstiegszeit (induktive Last)
rise time (inductive load)
Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)
Fallzeit (induktive Last)
fall time (inductive load)
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
Kurzschlußverhalten
SC Data
VCE = 0V, VGE =20V, Tvj =25°C
IC = INenn,
VCC =
VGE = ±15V, Tvj = 25°C, RG =
VGE = ±15V, Tvj = 125°C, RG =
IC = INenn,
VCC =
VGE = ±15V, Tvj = 25°C, RG =
VGE = ±15V, Tvj = 125°C, RG =
IC = INenn,
VCC =
VGE = ±15V, Tvj = 25°C, RG =
VGE = ±15V, Tvj = 125°C, RG =
IC = INenn,
VCC =
VGE = ±15V, Tvj = 25°C, RG =
VGE = ±15V, Tvj = 125°C, RG =
IC = INenn,
VCC =
VGE = ±15V, Tvj = 125°C, RG =
LS =
IC = INenn,
VCC =
VGE = ±15V, Tvj = 125°C, RG =
LS =
tP 10µs, VGE 15V, RG =
Tvj125°C,
VCC =
dI/dt =
min.
50 A
VF -
V(TO)
-
rT -
1600 V
IR -
50 A
50 A
2 mA
RAA'+CC'
-
VCE sat
min.
-
-
VGE(TO)
4,5
Cies
-
1200 V
ICES
-
600 V
15 Ohm
15 Ohm
600 V
15 Ohm
15 Ohm
600 V
15 Ohm
15 Ohm
600 V
15 Ohm
15 Ohm
600 V
15 Ohm
50 nH
600 V
15 Ohm
50 nH
15 Ohm
720 V
4000 A/µs
IGES
td,on
tr
td,off
tf
Eon
Eoff
ISC
-
-
-
-
-
-
-
-
-
-
-
-
typ. max.
1,05 -
V
- 0,8 V
- 6,5 m
3 - mA
4 - m
typ.
3,2
3,85
max.
3,7
-
V
V
5,5 6,5
V
3,3 - nF
- 5 mA
- 400 nA
60 - ns
60 - ns
50 - ns
50 - ns
340 -
400 -
ns
ns
50 - ns
60 - ns
6,5 - mWs
3,4 - mWs
300 -
A
2/11
DB-PIM-S_IGBT_V2.xls
2001-11-28


Part Number FP50R12KS4C
Description IGBT-Module
Maker eupec
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