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FP50R12KT4_B11 - IGBT-Module

Key Features

  • Low Switching Losses.
  • Tvj op = 150°C.
  • VCEsat with positive Temperature Coefficient.
  • Low VCEsat Mechanical Features.
  • High.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FP50R12KT4_B11 EconoPIM™2ModulmitTrench/FeldstoppIGBT4undEmitterControlled4DiodeundPressFIT/NTC EconoPIM™2modulewithTrench/FieldstopIGBT4andEmitterControlled4diodeandPressFIT/NTC VCES = 1200V IC nom = 50A / ICRM = 100A TypischeAnwendungen • Hilfsumrichter • Motorantriebe • Servoumrichter ElektrischeEigenschaften • NiedrigeSchaltverluste • Tvjop=150°C • VCEsatmitpositivemTemperaturkoeffizienten • NiedrigesVCEsat MechanischeEigenschaften • HoheLast-undthermischeWechselfestigkeit • HoheLeistungsdichte • IntegrierterNTCTemperaturSensor • Kupferbodenplatte • PressFITVerbindungstechnik • Standardgehäuse TypicalApplications • AuxiliaryInverters • MotorDrives • ServoDriv