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FP50R12KT4G - IGBT

Key Features

  • Low Switching Losses.
  • Low VCEsat.
  • Trench IGBT 4.
  • Tvj op = 150°C.
  • VCEsat with positive Temperature Coefficient Mechanical Features.
  • Al2O3 Substrate with Low Thermal Resistance.
  • High Power and Thermal Cycling Capability.
  • Integrated NTC temperature sensor.
  • Copper Base Plate.
  • Solder Contact Technology.
  • RoHS compliant.
  • Standard Housing Module Label Code Barcode Code 128 DMX - Code prepared b.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FP50R12KT4G EconoPIM™3ModulmitschnellemTrench/FeldstoppIGBT4undEmitterControlled4DiodeundNTC EconoPIM™3modulewithfastTrench/FieldstopIGBT4andEmitterControlled4diodeandNTC VCES = 1200V IC nom = 50A / ICRM = 100A TypischeAnwendungen • Hilfsumrichter • Motorantriebe • Servoumrichter ElektrischeEigenschaften • NiedrigeSchaltverluste • NiedrigesVCEsat • TrenchIGBT4 • Tvjop=150°C • VCEsatmitpositivemTemperaturkoeffizienten MechanischeEigenschaften • Al2O3 Substrat mit kleinem thermischen Widerstand • HoheLast-undthermischeWechselfestigkeit • IntegrierterNTCTemperaturSensor • Kupferbodenplatte • Lötverbindungstechnik • RoHSkonform • Standardgehäuse TypicalApplications • Aux