BSM300GAL120DLC
BSM300GAL120DLC is IGBT-Module manufactured by eupec GmbH.
Technische Information / Technical Information
IGBT-Module IGBT-Modules
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral der Diode I2t
- value, Diode Isolations-Prüfspannung insulation test voltage t P = 1 ms TC = 80 °C TC = 25 °C t P = 1 ms, T C = 80°C VCES IC,nom. IC ICRM 1200 300 625 600 V A A A
..
TC=25°C, Transistor
Ptot
2,5 k W
VGES
+/- 20V
IFRM
VR = 0V, t p = 10ms, T Vj = 125°C
I2t
19 k A2s
RMS, f = 50 Hz, t = 1 min.
VISOL
2,5 k V
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage Gate-Schwellenspannung gate threshold voltage Gateladung gate charge Eingangskapazität input capacitance Rückwirkungskapazität reverse transfer capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current IC = 300A, V GE = 15V, Tvj = 25°C IC = 300A, V GE = 15V, Tvj = 125°C IC = 12m A, VCE = VGE, Tvj = 25°C VGE(th) VCE sat min.
4,5 typ.
2,1 2,4 5,5 max.
2,6 2,9 6,5 V V V
VGE = -15V...+15V
- 3,2
- µC f = 1MHz,Tvj = 25°C,V CE = 25V, VGE = 0V
Cies
- 21
- n F f = 1MHz,Tvj = 25°C,V CE = 25V, VGE = 0V VCE = 1200V, VGE = 0V, Tvj = 25°C VCE = 1200V, VGE = 0V, Tvj = 125°C VCE = 0V, VGE = 20V, Tvj = 25°C
Cres ICES
- 1,4 8 800
- 360 350 n F µA µA n A
IGES
- prepared by: Mark Münzer approved by: H. Hierholzer date of publication: 07.02.2000 revision:...
