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eupec GmbH

BSM300GAL120DLC Datasheet Preview

BSM300GAL120DLC Datasheet

IGBT-Module

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Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM300GAL120DLC
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
TC = 80 °C
TC = 25 °C
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
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Gesamt-Verlustleistung
total power dissipation
tP = 1 ms, TC = 80°C
TC=25°C, Transistor
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
tP = 1 ms
Grenzlastintegral der Diode
I2t - value, Diode
VR = 0V, tp = 10ms, TVj = 125°C
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
VCES
IC,nom.
IC
ICRM
Ptot
VGES
IF
IFRM
I2t
VISOL
1200
300
625
600
2,5
+/- 20V
300
600
19
2,5
V
A
A
A
kW
V
A
A
kA2s
kV
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
IC = 300A, VGE = 15V, Tvj = 25°C
IC = 300A, VGE = 15V, Tvj = 125°C
Gate-Schwellenspannung
gate threshold voltage
IC = 12mA, VCE = VGE, Tvj = 25°C
Gateladung
gate charge
VGE = -15V...+15V
Eingangskapazität
input capacitance
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V
Rückwirkungskapazität
reverse transfer capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V
VCE = 1200V, VGE = 0V, Tvj = 25°C
VCE = 1200V, VGE = 0V, Tvj = 125°C
VCE = 0V, VGE = 20V, Tvj = 25°C
prepared by: Mark Münzer
approved by: H. Hierholzer
date of publication: 07.02.2000
revision: 2
VCE sat
min.
-
-
typ.
2,1
2,4
max.
2,6
2,9
VGE(th)
4,5
5,5
6,5
V
V
V
QG - 3,2 - µC
Cies - 21 - nF
Cres - 1,4 - nF
ICES
-
8 360 µA
- 800 - µA
IGES
-
- 350 nA
1(8)
Seriendatenblatt_BSM300GAL120DLC.xls




eupec GmbH

BSM300GAL120DLC Datasheet Preview

BSM300GAL120DLC Datasheet

IGBT-Module

No Preview Available !

Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM300GAL120DLC
Charakteristische Werte / Characteristic values
Transistor / Transistor
Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)
Anstiegszeit (induktive Last)
rise time (inductive load)
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Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)
Fallzeit (induktive Last)
fall time (inductive load)
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
Kurzschlußverhalten
SC Data
IC = 300A, VCE = 600V
VGE = ±15V, RG = 3,3, Tvj = 25°C
VGE = ±15V, RG = 3,3, Tvj = 125°C
IC = 300A, VCE = 600V
VGE = ±15V, RG = 3,3, Tvj = 25°C
VGE = ±15V, RG = 3,3, Tvj = 125°C
IC = 300A, VCE = 600V
VGE = ±15V, RG = 3,3, Tvj = 25°C
VGE = ±15V, RG = 3,3, Tvj = 125°C
IC = 300A, VCE = 600V
VGE = ±15V, RG = 3,3, Tvj = 25°C
VGE = ±15V, RG = 3,3, Tvj = 125°C
IC = 300A, VCE = 600V, VGE = 15V
RG = 3,3, Tvj = 125°C, LS = 60nH
IC = 300A, VCE = 600V, VGE = 15V
RG = 3,3, Tvj = 125°C, LS = 60nH
tP 10µsec, VGE 15V, RG = 3,3
TVj125°C, VCC=900V, VCEmax=VCES -LsCE ·dI/dt
Modulinduktivität
stray inductance module
Modul Leitungswiderstand, Anschlüsse – Chip
module lead resistance, terminals – chip
TC=25°C
Charakteristische Werte / Characteristic values
Diode / Diode
Durchlaßspannung
forward voltage
IF = 300A, VGE = 0V, Tvj = 25°C
IF = 300A, VGE = 0V, Tvj = 125°C
Rückstromspitze
peak reverse recovery current
IF = 300A, - di F/dt = 5400A/µsec
VR = 600V, VGE = -15V, Tvj = 25°C
VR = 600V, VGE = -15V, Tvj = 125°C
Sperrverzögerungsladung
recovered charge
IF = 300A, - di F/dt = 5400A/µsec
VR = 600V, VGE = -15V, Tvj = 25°C
VR = 600V, VGE = -15V, Tvj = 125°C
Abschaltenergie pro Puls
reverse recovery energy
IF = 300A, - di F/dt = 5400A/µsec
VR = 600V, VGE = -15V, Tvj = 25°C
VR = 600V, VGE = -15V, Tvj = 125°C
min. typ. max.
td,on
- 0,05 -
µs
- 0,06 -
µs
tr
- 0,05 -
µs
- 0,07 -
µs
td,off
- 0,57 -
µs
- 0,57 -
µs
tf
- 0,04 -
µs
- 0,05 -
µs
Eon - 35 - mWs
Eoff - 36 - mWs
ISC
LsCE
- 1800 -
- 25 -
A
nH
RCC‘+EE‘
-
0,20
-
m
min. typ. max.
VF
-
1,8 2,3
V
-
1,7 2,2
V
IRM - 348 - A
- 420 -
A
Qr - 28 - µAs
- 58 - µAs
Erec - 9 - mWs
- 21 - mWs
2(8)
Seriendatenblatt_BSM300GAL120DLC.xls


Part Number BSM300GAL120DLC
Description IGBT-Module
Maker eupec GmbH
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BSM300GAL120DLC Datasheet PDF






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