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eupec GmbH

BSM30GP60 Datasheet Preview

BSM30GP60 Datasheet

Elektrische Eigenschaften / Electrical properties

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Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM30GP60
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Diode Gleichrichter/ Diode Rectifier
Periodische Rückw. Spitzensperrspannung
repetitive peak reverse voltage
Durchlaßstrom Grenzeffektivwert
RMS forward current per chip
www.DataSheet4U.com
Dauergleichstrom
DC forward current
Stoßstrom Grenzwert
surge forward current
Grenzlastintegral
I2t - value
TC = 80°C
tP = 10 ms,
tP = 10 ms,
tP = 10 ms,
tP = 10 ms,
Tvj = 25°C
Tvj = 150°C
Tvj = 25°C
Tvj = 150°C
Transistor Wechselrichter/ Transistor Inverter
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
Tc = 80 °C
TC = 25 °C
tP = 1 ms,
Gesamt-Verlustleistung
total power dissipation
TC = 25°C
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
T C = 80 °C
Diode Wechselrichter/ Diode Inverter
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
Grenzlastintegral
I2t - value
Tc = 80 °C
tP = 1 ms
VR = 0V, tp = 10ms, Tvj = 125°C
Transistor Brems-Chopper/ Transistor Brake-Chopper
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
TC = 80 °C
TC = 25 °C
tP = 1 ms, TC = 80°C
Gesamt-Verlustleistung
total power dissipation
TC = 25°C
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Diode Brems-Chopper/ Diode Brake-Chopper
Dauergleichstrom
DC forward current
Tc = 80 °C
Periodischer Spitzenstrom
repetitive peak forw. current
tP = 1 ms
prepared by: Andreas Schulz
approved by: M.Hierholzer
date of publication:17.09.1999
revision: 4
VRRM
IFRMSM
Id
IFSM
I2t
VCES
IC,nom.
IC
ICRM
Ptot
VGES
IF
IFRM
I2t
VCES
IC,nom.
IC
ICRM
Ptot
VGES
IF
IFRM
1600
40
30
300
230
450
260
600
30
50
60
180
+/- 20V
30
60
240
600
15
25
30
100
+/- 20V
10
20
V
A
A
A
A
A2s
A2s
V
A
A
A
W
V
A
A
A2s
V
A
A
A
W
V
A
A
1(11)
DB-PIM-9.xls




eupec GmbH

BSM30GP60 Datasheet Preview

BSM30GP60 Datasheet

Elektrische Eigenschaften / Electrical properties

No Preview Available !

Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM30GP60
Modul Isolation/ Module Isolation
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
NTC connected to Baseplate
VISOL
2,5
kV
Elektrische Eigenschaften / Electrical properties
www.DataSheet4U.cComharakteristische Werte / Characteristic values
Diode Gleichrichter/ Diode Rectifier
Durchlaßspannung
forward voltage
Tvj = 150°C,
Schleusenspannung
threshold voltage
Tvj = 150°C
Ersatzwiderstand
slope resistance
Tvj = 150°C
Sperrstrom
reverse current
Tvj = 150°C,
Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip
TC = 25°C
I F = 30 A
V R = 1600 V
Transistor Wechselrichter/ Transistor Inverter
Kollektor-Emitter Sättigungsspannung
VGE = 15V, Tvj = 25°C,
collector-emitter saturation voltage
VGE = 15V, Tvj = 125°C,
Gate-Schwellenspannung
gate threshold voltage
VCE = VGE, Tvj = 25°C,
IC =
IC =
IC =
Eingangskapazität
input capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
f = 1MHz, Tvj = 25°C
VCE = 25 V, VGE = 0 V
VGE = 0V, Tvj = 25°C,
VGE = 0V, Tvj =125°C,
VCE =
VCE =
VCE = 0V, VGE =20V, Tvj =25°C
Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)
Anstiegszeit (induktive Last)
rise time (inductive load)
Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)
Fallzeit (induktive Last)
fall time (inductive load)
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
Kurzschlußverhalten
SC Data
IC = INenn,
VCC =
VGE = ±15V, Tvj = 25°C, RG =
VGE = ±15V, Tvj = 125°C, RG =
IC = INenn,
VCC =
VGE = ±15V, Tvj = 25°C, RG =
VGE = ±15V, Tvj = 125°C, RG =
IC = INenn,
VCC =
VGE = ±15V, Tvj = 25°C, RG =
VGE = ±15V, Tvj = 125°C, RG =
IC = INenn,
VCC =
VGE = ±15V, Tvj = 25°C, RG =
VGE = ±15V, Tvj = 125°C, RG =
IC = INenn,
VCC =
VGE = ±15V, Tvj = 125°C, RG =
LS =
IC = INenn,
VCC =
VGE = ±15V, Tvj = 125°C, RG =
LS =
tP 10µs, VGE 15V, RG =
Tvj125°C,
VCC =
dI/dt =
30 A
30 A
0,7 mA
600 V
600 V
300 V
33 Ohm
33 Ohm
300 V
33 Ohm
33 Ohm
300 V
33 Ohm
33 Ohm
300 V
33 Ohm
33 Ohm
300 V
33 Ohm
75 nH
300 V
33 Ohm
75 nH
33 Ohm
360 V
1800 A/µs
min.
VF -
V(TO)
-
rT -
IR -
RAA’+CC’
-
VCE sat
min.
-
-
VGE(TO) 4,5
Cies
ICES
IGES
-
-
-
-
td,on
-
-
tr -
-
td,off
-
-
tf -
-
Eon -
Eoff -
ISC -
typ. max.
1,1 1,15
V
- 0,8 V
- 10,5 m
2 - mA
8 - m
typ.
1,95
2,2
max.
2,45
-
V
V
5,5 6,5
V
1,6 - nF
1,0 500 µA
1,2 - mA
- 300 nA
50 - ns
50 - ns
50 - ns
50 - ns
250 -
270 -
ns
ns
30 - ns
40 - ns
1,4 - mWs
1 - mWs
120 -
A
2(11)
DB-PIM-9.xls


Part Number BSM30GP60
Description Elektrische Eigenschaften / Electrical properties
Maker eupec GmbH
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