* low on-resistance achievable with low gate drive. Features
* 2 x N + 2 x P channels in a SOIC package
* Low voltage (VGS = 4.5 V) gate drive Applications
* DC Motor control
* DC-AC Inverters Ordering information Device 5HB06N8 Device marking WFS 5HB06N8 Reel size (i
5HB06N8
maspower
1.99 MB
Power mosfet.
5HB06N8 MOS H-BRIDGE- 60V HBRIDGE-DRIVE-2NP-Channel Advanced Power MOSFET Summary Device V(BR)DSS N-CH 60V P-CH -60V QG 9.0nC RDS(on) 25m.
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