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5HB06N8 - Power MOSFET

Description

This new generation complementary MOSFET H-Bridge

Features

  • low on-resistance achievable with low gate drive. Features.
  • 2 x N + 2 x P channels in a SOIC package.
  • Low voltage (VGS = 4.5 V) gate drive.

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Datasheet preview – 5HB06N8

Datasheet Details

Part number 5HB06N8
Manufacturer maspower
File Size 1.99 MB
Description Power MOSFET
Datasheet download datasheet 5HB06N8 Datasheet
Additional preview pages of the 5HB06N8 datasheet.

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    Full PDF Text Transcription

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    5HB06N8 MOS H-BRIDGE- 60V HBRIDGE-DRIVE-2NP-Channel Advanced Power MOSFET Summary Device V(BR)DSS N-CH 60V P-CH -60V QG 9.0nC RDS(on) 25mΩ @ VGS= 10V 45mΩ @ VGS= 4.5V 12.7nC 50mΩ @ VGS= -10V 75mΩ @ VGS= -4.5V Description This new generation complementary MOSFET H-Bridge features low on-resistance achievable with low gate drive. Features • 2 x N + 2 x P channels in a SOIC package • Low voltage (VGS = 4.5 V) gate drive Applications • DC Motor control • DC-AC Inverters Ordering information Device 5HB06N8 Device marking WFS 5HB06N8 Reel size (inches) 13 Tape width Quantity (mm) per reel 12 2,500 www.maspowersemi.
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