5HB06N8 Description
This new generation plementary MOSFET H-Bridge.
5HB06N8 Key Features
- 2 x N + 2 x P channels in a SOIC package
- Low voltage (VGS = 4.5 V) gate drive
5HB06N8 is Power MOSFET manufactured by maspower.
This new generation plementary MOSFET H-Bridge.