5HB06N8
5HB06N8 is Power MOSFET manufactured by maspower.
H-BRIDGE-
60V HBRIDGE-DRIVE-2NP-Channel Advanced Power
MOSFET
Summary
Device
V(BR)DSS
N-CH
60V
P-CH
-60V
QG 9.0nC
RDS(on) 25mΩ @ VGS= 10V 45mΩ @ VGS= 4.5V
12.7nC
50mΩ @ VGS= -10V 75mΩ @ VGS= -4.5V
Description
This new generation plementary MOSFET H-Bridge
Features low on-resistance achievable with low gate drive.
Features
- 2 x N + 2 x P channels in a SOIC package
- Low voltage (VGS = 4.5 V) gate drive
Applications
- DC Motor control
- DC-AC Inverters
Ordering information
Device 5HB06N8
Device marking
WFS 5HB06N8
Reel size (inches)
Tape width Quantity
(mm) per...
