900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






maspower

5HB06N8 Datasheet Preview

5HB06N8 Datasheet

Power MOSFET

No Preview Available !

5HB06N8
MOS
H-BRIDGE-
60V HBRIDGE-DRIVE-2NP-Channel Advanced Power
MOSFET
Summary
Device
V(BR)DSS
N-CH
60V
P-CH
-60V
QG
9.0nC
RDS(on)
25mΩ @ VGS= 10V
45mΩ @ VGS= 4.5V
12.7nC
50mΩ @ VGS= -10V
75mΩ @ VGS= -4.5V
Description
This new generation complementary MOSFET H-Bridge
features low on-resistance achievable with low gate drive.
Features
2 x N + 2 x P channels in a SOIC package
Low voltage (VGS = 4.5 V) gate drive
Applications
DC Motor control
DC-AC Inverters
Ordering information
Device
5HB06N8
Device marking
WFS
5HB06N8
Reel size
(inches)
13
Tape width Quantity
(mm)
per reel
12
2,500
www.maspowersemi.com
1




maspower

5HB06N8 Datasheet Preview

5HB06N8 Datasheet

Power MOSFET

No Preview Available !

5HB06N8
H-BRIDGE-MOS
60V HBRIDGE-DRIVE-2NP-Channel Advanced Power MOSFET
Absolute maximum ratings
Parameter
Drain-Source voltage
Gate-Source voltage
Continuous Drain current @ VGS= 10V; TA=25°C (b)
@ VGS= 10V; TA=70°C (b)
@ VGS= 10V; TA=25°C (a)
@ VGS= 10V; TL=25°C (f)
(c)
Pulsed Drain current @ VGS= 10V; TA=25°C
(b)
Continuous Source current (Body diode) at TA =25°C
Pulsed Source current (Body diode) at TA =25°C (c)
(a)
Power dissipation at TA =25°C
Linear derating factor
(b)
Power dissipation at TA =25°C
Linear derating factor
(f)
Power dissipation at TL =25°C
Linear derating factor
Operating and storage temperature range
Symbol
V
DSS
V
GS
N-
channel
60
±20
P-
channel
-60
±20
ID
4.98
-4.13
3.98
-3.31
3.98
-3.36
4.17
-3.51
I
DM
22.9
-19.6
IS
I
SM
PD
PD
PD
T, T
j stg
2.0
-2.0
22.9
-19.6
0.87
6.94
1.35
10.9
0.95
0.98
7.63
7.81
-55 to 150
Unit
V
V
A
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
°C
Thermal resistance
Parameter
(a)
Junction to ambient
(b)
Junction to ambient
(d)
Junction to ambient
(e)
Junction to ambient
(f)
Junction to lead
Symbol
R
θJA
R
θJA
R
θJA
R
θJA
R
θJL
Value
144
92
106
254
131
128
Unit
°C/W
°C/W
°C/W
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
with the heat-sink split into two equal areas (one for each drain connection); the device is measured when operating in a steady-state
condition with one active die.
(b) Same as note (a), except the device is measured at t 10 sec.
(c) Same as note (a), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the maximum
junction temperature.
(d) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions
with the heat-sink split into two equal areas (one for each drain connection); the device is measured when operating in a steady-state
condition with one active die.
(e) For a device surface mounted on minimum copper 1.6mm FR4 PCB, in still air conditions; the device is measured when operating in a
steady-state condition with one active die.
(f) Thermal resistance from junction to solder-point (at the end of the drain lead); the device is operating in a steady-state condition with
one active die.
www.maspowersemi.com
2


Part Number 5HB06N8
Description Power MOSFET
Maker maspower
PDF Download

5HB06N8 Datasheet PDF






Similar Datasheet

1 5HB06N8 Power MOSFET
maspower





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy