Click to expand full text
N-Channel Power Trench Mosfet Chip
100V, 96A, 8.5mΩ1
Part FDP085N10A
V(BR)DSS 100V
IDn 96A
RDS(on) Max 8.5mΩ1
Die Size 2.4 x 4.4 mm2
See page 2 for ordering part numbers & supply formats
FDP085N10A
Applications
Features
• High density AC / DC Converters • Motor drives & Micro Inverters
• High Power & Current Handling Capability • Low RDS (on) per mm2
Maximum Ratings
• Low Gate Charge, Fast Switching
Symbol VDSS VGSS ID
IDM TJ, TSTG
EAS
dv/dt
Parameter
Drain to Source Voltage
Drain Current2
Gate to Source Voltage Continuous (TC = 25°C)
Drain Current3
Continuous (TC = 100°C) Pulsed
Operation Junction & Storage Temperature
Single Pulsed Avalanche Energy4
Peak Diode Recovery dv/dt4
L = 3mH, IAS = 13.