FDP085N10A Datasheet | onsemi

- N-Channel PowerTrench® MOSFET N-Channel PowerTrench® MOSFET 100 V, 96 A, 8.5 mΩ Features - RDS(on) = 7.35 mΩ (Typ.) @ VGS = 10 V, ID = 96 A - Fast Switching Speed - Low Gate Charge, QG = 31 nC (Typ.) - High Performance Trench Technology for Extremely Low RDS(on) - High Power and Current Handling Capability - RoHS pliant Description This N-Channel MOSFET is produced using ON Semiconductor's PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications - Synchronous Rectification for ATX / Server / Tele PSU - Battery Protection Circuit - Motor Drives and Uninterruptible Power...