FDP085N10A Description
This N-Channel MOSFET is produced using ON Semiconductor's PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications Synchronous Rectification for ATX / Server / Tele PSU Battery Protection Circuit Motor Drives and Uninterruptible Power Supplies D GDS TO-220 G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. , Junction to...
FDP085N10A Key Features
- RDS(on) = 7.35 mΩ (Typ.) @ VGS = 10 V, ID = 96 A
- Fast Switching Speed
- Low Gate Charge, QG = 31 nC (Typ.)
- High Performance Trench Technology for Extremely Low
- High Power and Current Handling Capability
- RoHS pliant
FDP085N10A Applications
- Synchronous Rectification for ATX / Server / Tele PSU
- Battery Protection Circuit