FDP085N10A - N-Channel PowerTrench MOSFET

Micross

Key Features

High density AC / DC Converters.
Motor drives & Micro Inverters.
High Power & Current Handling Capability.
Low RDS (on) per mm2 Maximum Ratings.
Low Gate Charge, Fast Switching Symbol VDSS VGSS ID IDM TJ, TSTG EAS dv/dt Parameter Drain to Source Voltage Drain Current2 Gate to Source Voltage Continuous (TC = 25°C) Drain Current3 Continuous (TC = 100°C) Pulsed Operation Junction & Storage Temperature Single Pulsed Avalanche Energy4 Peak Di.

FDP085N10A n-channel powertrench mosfet by Micross - Datasheet Preview

Datasheet Details

Part number	FDP085N10A
Manufacturer	Micross
File Size	650.20 KB
Description	N-Channel PowerTrench MOSFET
Datasheet	FDP085N10A Datasheet

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N-Channel Power Trench Mosfet Chip 100V, 96A, 8.5mΩ1 Part FDP085N10A V(BR)DSS 100V IDn 96A RDS(on) Max 8.5mΩ1 Die Size 2.4 x 4.4 mm2 See page 2 for ordering part numbers & supply formats FDP085N10A Applications Features • High density AC / DC Converters • Motor drives & Micro Inverters • High Power & Current Handling Capability • Low RDS (on) per mm2 Maximum Ratings • Low Gate Charge, Fast Switching Symbol VDSS VGSS ID IDM TJ, TSTG EAS dv/dt Parameter Drain to Source Voltage Drain Current2 Gate to Source Voltage Continuous (TC = 25°C) Drain Current3 Continuous (TC = 100°C) Pulsed Operation Junction & Storage Temperature Single Pulsed Avalanche Energy4 Peak Diode Recovery dv/dt4 L = 3mH, IAS = 13.