FDP085N10A Overview
Key Specifications
Package: TO-220
Mount Type: Through Hole
Pins: 3
Height: 15.215 mm
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Key Features
- RDS(on) = 7.35 mΩ (Typ.) @ VGS = 10 V, ID = 96 A
- Fast Switching Speed
- Low Gate Charge, QG = 31 nC (Typ.)
- High Performance Trench Technology for Extremely Low RDS(on)
- High Power and Current Handling Capability
- RoHS Compliant
