The FDP085N10A is a N-Channel PowerTrench MOSFET.
| Package | TO-220 |
|---|---|
| Mount Type | Through Hole |
| Pins | 3 |
| Height | 15.215 mm |
| Length | 10.36 mm |
| Width | 4.672 mm |
| Max Operating Temp | 175 °C |
| Min Operating Temp | -55 °C |
| Part Number | FDP085N10A Datasheet |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| Overview |
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Appl.
* RDS(on) = 7.35 mΩ (Typ.) @ VGS = 10 V, ID = 96 A * Fast Switching Speed * Low Gate Charge, QG = 31 nC (Typ.) * High Performance Trench Technology for Extremely Low RDS(on) * High Power and Current Handling Capability * RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild S. |
| Part Number | FDP085N10A Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | onsemi |
| Overview |
This N-Channel MOSFET is produced using ON Semiconductor's PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Application.
* RDS(on) = 7.35 mΩ (Typ.) @ VGS = 10 V, ID = 96 A * Fast Switching Speed * Low Gate Charge, QG = 31 nC (Typ.) * High Performance Trench Technology for Extremely Low RDS(on) * High Power and Current Handling Capability * RoHS Compliant Description This N-Channel MOSFET is produced using ON Semicond. |
| Part Number | FDP085N10A Datasheet |
|---|---|
| Description | N-Channel PowerTrench MOSFET |
| Manufacturer | Micross |
| Overview |
N-Channel Power Trench Mosfet Chip
100V, 96A, 8.5mΩ1
Part FDP085N10A
V(BR)DSS 100V
IDn 96A
RDS(on) Max 8.5mΩ1
Die Size 2.4 x 4.4 mm2
See page 2 for ordering part numbers & supply formats
FDP085.
* High density AC / DC Converters * Motor drives & Micro Inverters * High Power & Current Handling Capability * Low RDS (on) per mm2 Maximum Ratings * Low Gate Charge, Fast Switching Symbol VDSS VGSS ID IDM TJ, TSTG EAS dv/dt Parameter Drain to Source Voltage Drain Current2 Gate to Source V. |
| Part Number | FDP085N10A Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤8.5mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust d.
*Static drain-source on-resistance: RDS(on) ≤8.5mΩ *Enhancement mode *Fast Switching Speed *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *DC to DC converters *synchronous rectification for telecommunication PSU *AC motor drive. |
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| Avnet | 2 | 800+ : 1.33486 USD 1600+ : 1.2627 USD 3200+ : 1.22947 USD 6400+ : 1.19795 USD |
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| Newark | 10 | 1+ : 0.5 USD 10+ : 0.5 USD 100+ : 0.5 USD 500+ : 0.5 USD |
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| Verical | 650 | 50+ : 1.0458 USD 100+ : 1.0114 USD 500+ : 0.9062 USD |
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