XESD2FD24C Datasheet Text
Description
The ESD2FD24C protects sensitive semiconductor ponents from damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events. They feature large cross-sectional area junctions for conducting high transient currents, offer desirable electrical characteristics for board level protection, such as fast response time, low operating voltage. It gives designer the flexibility to protect one bi-directional line in applications where arrays are not practical.
Feature
¾ 300W peak pulse power per line (tP = 8/20μs) ¾ DFN1006-2L package ¾ Replacement for MLV(0402) ¾ Bidirectional configurations ¾ Response time is typically < 1ns ¾ Low clamping voltage ¾ RoHS pliant ¾ Transient protection for data lines to
IEC61000-4-2(ESD) ±20KV(air), ±20KV(contact);
IEC61000-4-4 (EFT) 40A (5/50ns)
Applications
¾ Cellular phones ¾ Portable devices ¾ Digital cameras ¾ Power supplies
ESD Protector
Mechanical Characteristics
¾ Lead finish:100% matte Sn(Tin) ¾ Mounting position: Any ¾ Qualified max reflow temperature:260℃ ¾ Pure tin plating: 7 ~ 17 um ¾ Pin flatness:≤3mil
Electronics Parameter
Symbol
VRWM IR VBR IT IPP VC PPP CJ IF VF
Parameter
Peak Reverse Working Voltage Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT Test Current
Maximum Reverse Peak Pulse Current Clamping Voltage @ IPP Peak Pulse Power Junction Capacitance Forward Current Forward Voltage @ IF
I
IPP
VC VBR VRWM
IT IR
IR IT
V
VRWM VBR VC
IPP
ESD Protector
Electrical characteristics per line@25℃ (unless otherwise specified)
Parameter
Peak Reverse Working Voltage Breakdown Voltage...