4PT08AI-08 Datasheet | Nell Power Semiconductor

Features Symbol IT(RMS) VDRM/VRRM Value 4 600 to 800 10 to 200 Unit A V µA TO-251 (I-PAK) (4PTxx F) TO-252 (D-PAK) (4PTxx G) DESCRIPTION Thanks to highly sensitive triggering levels, the 4PT series is suitable for all applications where the available gate current is limited, such as motor control for hand tools, kitchen aids, capacitive discharge ignitions, overvoltage crowbar protection for low power supplies among others. Available in through-hole or surface-mount packages, they provide an optimized performance in a limited space area. TO-220AB (Non-lnsulated) (4PTxx A) TO-126 (Non-lnsulated) (4PTxx AM) KA G TO-220AB (lnsulated) (4PTxx AI) TO-202-3 (4PTxx AT) 2(A) 3(G) 1(K) ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS RMS on-state current full sine wave (180° conduction angle ) Average on-state current (180° conduction angle) Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) I2t Value for fusing IT(RMS) IT(AV) ITSM I2t TO-251/TO-252/TO-220AB TO-220AB insulated TO-126 TO-202-3 TO-251/TO-252/TO-220AB TO-220AB insulated TO-126 TO-202-3 F =50 Hz F =60 Hz tp = 10 ms Tc=115°C Tc=110°C Tc=95°C Tc=60°C Tc=115°C Tc=110°C Tc=95°C Tc=60°C t = 20 ms t = 16.7 ms Critical rate of rise of on-state current IG = 2xl GT, tr≤100ns Peak gate current d I/dt IGM F = 60 Hz Tp = 20 µs Tj = 125ºC Tj = 125ºC Average gate power dissipation PG(AV) Tj...