Datasheet4U Logo Datasheet4U.com

5N90 - N-Channel Power MOSFET

General Description

The Nell 5N90 is a three-terminal silicon device with current conduction capability of 5A, fast switching speed, low on-state resistance, breakdown voltage rating of 900V, and max.

threshold voltage of 5 volts.

Key Features

  • RDS(ON) = 2.80Ω @ VGS = 10V Ultra low gate charge(40nC max. ) Low reverse transfer capacitance (CRSS = 13pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D (Drain) G (Gate) S (Source).

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
5N90 N-Channel MOSFET Transistor Inchange Semiconductor
5N90 FQA5N90 Fairchild Semiconductor
5N90 N-CHANNEL POWER MOSFET Unisonic Technologies

Other Datasheets by Nell Power Semiconductor

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SEMICONDUCTOR 5N90 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (5A, 900Volts) DESCRIPTION The Nell 5N90 is a three-terminal silicon device with current conduction capability of 5A, fast switching speed, low on-state resistance, breakdown voltage rating of 900V, and max. threshold voltage of 5 volts. They are designed for use in applications such as switched mode power supplies, DC to DC converters, PWM motor controls, bridge circuits and general purpose switching applications. D GDS TO-220AB (5N90A) GDS TO-220F (5N90AF) FEATURES RDS(ON) = 2.80Ω @ VGS = 10V Ultra low gate charge(40nC max.