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nELL

6N60 Datasheet Preview

6N60 Datasheet

N-Channel Power MOSFET

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SEMICONDUCTOR
6N60 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
(6A, 600Volts)
DESCRIPTION
The Nell 6N60 is a three-terminal silicon
device with current conduction capability
of 6A, fast switching speed, low on-state
resistance, breakdown voltage rating of 600V,
and max. threshold voltage of 4 volts.
They are designed for use in applications such
as switched mode power supplies, DC to DC
converters, PWM motor controls, bridge circuits
and general purpose switching applications.
FEATURES
RDS(ON) = 1.5Ω@VGS = 10V
Ultra low gate charge(25nC max.)
Low reverse transfer capacitance
(CRSS = 10pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
D
GDS
TO-251 (I-PAK)
(6N60F)
D
D
G
S
TO-252 (D-PAK)
(6N60G)
GDS
TO-220AB
(6N60A)
GDS
TO-220F
(6N60AF)
PRODUCT SUMMARY
ID (A)
VDSS (V)
RDS(ON) (Ω)
QG(nC) max.
6
600
1.5 @ VGS = 10V
25
D (Drain)
G
(Gate)
S (Source)
www.nellsemi.com
Page 1 of 10




nELL

6N60 Datasheet Preview

6N60 Datasheet

N-Channel Power MOSFET

No Preview Available !

SEMICONDUCTOR
6N60 Series RRooHHSS
Nell High Power Products
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VDSS
Drain to Source voltage
TJ=25°C to 150°C
VDGR
Drain to Gate voltage
RGS=20KΩ
VGS
ID
IDM
IAR
EAR
EAS
dv/dt
Gate to Source voltage
Continous Drain Current
Pulsed Drain current(Note 1)
Avalanche current(Note 1)
Repetitive avalanche energy(Note 1)
Single pulse avalanche energy (Note 2)
Peak diode recovery dv/dt(Note 3)
TC=25°C
TC=100°C
IAR=6A, RGS=50Ω, VGS=10V
IAS=6A, L = 14mH
TO-251/ TO-252
PD Total power dissipation
TC=25°C TO-220AB
TO-220F
TJ
TSTG
Operation junction temperature
Storage temperature
TL Maximum soldering temperature, for 10 seconds 1.6mm from case
Mounting torque, #6-32 or M3 screw
Note: 1.Repetitive rating: pulse width limited by junction temperature.
2.IAS = 6A, VDD = 50V, L = 14mH, RGS = 25Ω, starting TJ=25°C.
3.ISD ≤ 6A, di/dt ≤ 200A/µs, VDD V(BR)DSS, starting TJ=25°C.
VALUE
UNIT
600
600 V
±30
6
3.7
A
24
6
13
mJ
440
4.5 V /ns
55
125 W
40
-55 to 150
-55 to 150
ºC
300
10 (1.1)
lbf.in (N.m)
THERMAL RESISTANCE
SYMBOL
PARAMETER
Rth(j-c)
Thermal resistance, junction to case
Rth(j-a)
Thermal resistance, junction to ambient
TO-251/ TO-252
TO-220AB
TO-220F
TO-251/TO-252
TO-220AB
TO-220F
Min.
Typ.
Max.
2.3
1.0
3.3
110
62.5
62.5
UNIT
ºC/W
www.nellsemi.com
Page 2 of 10


Part Number 6N60
Description N-Channel Power MOSFET
Maker nELL
Total Page 10 Pages
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