Nell Power Semiconductor BD912
The BD911 is a silicon epitaxial-base planar NPN transistor in TO-220AB package. The complementary PNP type is BD912.FEATURES
Designed for general-purpose switching and amplifier applications. DC current gain specified to 10A High current gain-Band width product: fT = 3 MHz (Min.) @ lC = 0.5 Adc Excellent safe operating areaDESCRIPTION
lt is intended for use in general-purpose amplifier and switding applications. The complementary PNP type is BD912. 12 3 TO-220AB INTERNAL SCHEMATIC DIAGRAM C (2) (1) B (3) E BD911(NPN) C (2) (1) B (3) E BD912(PNP)ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise specified) SYMBOL PARAMETER VCBO Collector to base voltage (IE = 0) VCEO Collector to emitter voltage (IB = 0) VEBO Emitter to base voltage (IC = 0) IC Collector current IB Base current Total power dissipation PC Derate above 25ºC TC= 25°C Tj Junction temperature Tstg Stora