I2N60 Datasheet - nELL

N-Channel Power MOSFET

I2N60 Features

* RDS(ON) = 0.8Ω @ VGS = 10V Ultra low gate charge(54nC max.) Low reverse transfer capacitance (CRSS = 25pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature PRODUCT SUMMARY ID (A) VDSS (V) RDS(ON) (Ω) QG(nC) max. 12 600 0.8 @ V

I2N60 General Description

The Nell 12N60 is a three-terminal silicon device with current conduction capability of 12A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage of 4 volts. They are designed for use in applications such as switched mode power supplies. DC to D.

I2N60 Datasheet (330.99 KB)

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I2N60

Manufacturer:

nELL

File Size:

330.99 KB

Description:

N-channel power mosfet.

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I2N60 N-Channel Power MOSFET nELL

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I2N60 Features

I2N60 General Description

Datasheet Details

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