2N7002PV
2N7002PV is Dual N-channel MOSFET manufactured by Nexperia.
description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
- Logic-level patible
- Very fast switching
- Trench MOSFET technology
3. Applications
- Relay driver
- High-speed line driver
- Low-side loadswitch
- Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Per transistor
VDS drain-source voltage Tamb = 25 °C
VGS gate-source voltage
ID drain current
VGS = 10 V; Tamb = 25 °C
[1]
Static characteristics (per transistor)
RDSon drain-source on-state VGS = 10 V; ID = 500 m A; pulsed; tp ≤ resistance
300 µs; δ ≤ 0.01; Tj = 25 °C
Min Typ Max
- -
-20
- 20
- -
- 1
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.
Unit
V V m A
Ω
Nexperia
5. Pinning...
