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2N7002P - 360mA N-channel Trench MOSFET

General Description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Key Features

  • AEC-Q101 qualified.
  • Logic-level compatible.
  • Trench MOSFET technology.
  • Very fast switching 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N7002P 60 V, 360 mA N-channel Trench MOSFET Rev. 02 — 29 July 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits „ AEC-Q101 qualified „ Logic-level compatible „ Trench MOSFET technology „ Very fast switching 1.3 Applications „ High-speed line driver „ Low-side loadswitch „ Relay driver „ Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = 10 V; Tamb = 25 °C VGS = 10 V; ID = 500 mA; Tj = 25 °C; pulsed; tp ≤ 300 µs; δ ≤ 0.