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BAV756S - High-speed switching diodes

General Description

High-speed switching diode, encapsulated in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.

2.

Key Features

  • High switching speed: trr ≤ 4 ns.
  • Low capacitance: Cd ≤ 2 pF.
  • Low leakage current.
  • Reverse voltage: VR ≤ 90 V.
  • Very small SMD plastic packages.
  • AEC-Q101 qualified 3.

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Datasheet Details

Part number BAV756S
Manufacturer Nexperia
File Size 207.40 KB
Description High-speed switching diodes
Datasheet download datasheet BAV756S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BAV756S High-speed switching diode 28 October 2022 Product data sheet 1. General description High-speed switching diode, encapsulated in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High switching speed: trr ≤ 4 ns • Low capacitance: Cd ≤ 2 pF • Low leakage current • Reverse voltage: VR ≤ 90 V • Very small SMD plastic packages • AEC-Q101 qualified 3. Applications • High-speed switching • General-purpose switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Per diode IR reverse current VR reverse voltage trr reverse recovery time Conditions VR = 80 V; Tamb = 25 °C IF = 10 mA; IR = 10 mA; RL = 100 Ω; IR(meas) = 1 mA; Tamb = 25 °C Min Typ Max Unit - - 0.5 µA - - 90 V - - 4 ns 5.