Datasheet Summary
30 V, N-channel Trench MOSFET
7 July 2020
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
- Extended temperature range Tj = 175 °C
- Trench MOSFET technology
- Very fast switching
- Side wettable flanks for optical solder inspection
- ElectroStatic Discharge (ESD) protection > 1 kV HBM (class H1C)
- AEC-Q101 qualified
3. Applications
- DC to DC conversion
- High-speed line driver
- Low-side load switch
- Switching circuits
4. Quick reference data
Table 1. Quick reference...